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BAS116WS-C

Description
Rectifier Diode, 1 Element, 0.215A, 85V V(RRM), Silicon, HALOGEN AND LEAD FREE PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size495KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric View All

BAS116WS-C Overview

Rectifier Diode, 1 Element, 0.215A, 85V V(RRM), Silicon, HALOGEN AND LEAD FREE PACKAGE-2

BAS116WS-C Parametric

Parameter NameAttribute value
MakerSECOS
package instructionHALOGEN AND LEAD FREE PACKAGE-2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current0.215 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.2 W
Maximum repetitive peak reverse voltage85 V
Maximum reverse recovery time0.003 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
BAS116WS
Elektronische Bauelemente
0.215A , 85V
Surface Mount Small Signal Switching Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low leakage current applications.
Medium speed switching times.
Surface mount package ideally suited for automatic Insertion.
H
D
SOD-323
1
Cathode Band
G
APPLICATINS
High speed switching application.
C
2
F
B
A
E
MARKING
JV
REF.
A
B
C
D
Millimeter
Min.
Max.
1.05 REF.
0.20 REF.
0.80
1.00
0.25
0.40
J
REF.
E
F
G
H
PACKAGE INFORMATION
Package
SOD-323
MPQ
3K
Leader Size
7 inch
Millimeter
Min.
Max.
0.080
0.180
1.15
1.45
1.60
1.80
2.30
2.70
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge
Current
Power Dissipation
Thermal Resistance Junction to Ambient Air
Junction, Storage Temperature
t=1.0µs
t=1.0ms
t=1.0s
I
FSM
P
D
R
θJA
T
J
, T
STG
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
FRM
Ratings
85
85
85
60
215
500
4
1
0.5
200
500
150, -65~150
Unit
V
V
V
V
mA
mA
A
mW
° /W
C
°
C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameters
Reverse Breakdown Voltage
Symbol
V
(BR)R
Min.
85
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
2
-
Max.
-
0.9
1
1.1
1.25
5
80
-
3
Unit
V
Test Conditions
I
R
=100µA
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=75V
V
R
=75V, T
J
=150°
C
V
R
=0, f=1.0MHz
I
F
=I
R
=10mA, I
RR
=0.1xI
R
Forward Voltage
V
F
V
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
http://www.SeCoSGmbH.com/
I
R
C
J
T
RR
nA
pF
nS
Any changes of specification will not be informed individually.
29-Nov-2011 Rev. A
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