The UT54ACS54 and the UT54ACTS54 are 4-wide AND-OR-
INVERT gates. The devices perform the Boolean function:
Y = AB+CD+EF+GH
The devices are characterized over full military temperature
range of -55°C to +125°C.
FUNCTION TABLE
INPUT
A
H
X
X
X
L
X
B
H
X
X
X
X
L
C
X
H
X
X
L
X
D
X
H
X
X
X
L
E
X
X
H
X
L
X
F
X
X
H
X
X
L
G
X
X
X
H
L
X
H
X
X
X
H
X
L
OUTPUT
Y
L
L
L
L
H
H
PINOUTS
14-Pin DIP
Top View
A
C
D
E
F
NC
V
SS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
B
NC
NC
H
G
Y
14-Lead Flatpack
Top View
A
C
D
E
F
NC
V
SS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
B
NC
NC
H
G
Y
LOGIC DIAGRAM
A
B
C
D
Y
E
F
LOGIC SYMBOL
A
B
C
D
E
F
G
H
(1)
(13)
(2)
(3)
(4)
(5)
(9)
(10)
&
&
&
>1
G
&
(8)
Y
H
Note:
1. Logic symbol in accordance with ANSI/IEEE standard 91-1984 and
IEC Publication 617-12.
1
OPERATIONAL ENVIRONMENT
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
LIMIT
1.0E6
80
120
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
Θ
JC
I
I
P
D
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum power dissipation
LIMIT
-0.3 to 7.0
-.3 to V
DD
+.3
-65 to +150
+175
+300
15.5
±10
3.2
UNITS
V
V
°C
°C
°C
°C/W
mA
W
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at
these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
2. PD = TS-TC/
Θ
JC.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
4.5 to 5.5
0 to V
DD
-55 to + 125
UNITS
V
V
°C
2
DC ELECTRICAL CHARACTERISTICS
7
(V
DD
= 5.0V
±
10%; V
SS
= 0V
6
, -55°C < T
C
< +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
SYMBOL
V
IL
PARAMETER
Low-level input voltage
1
ACTS
ACS
High-level input voltage
1
ACTS
ACS
Input leakage current
ACTS/ACS
Low-level output voltage
3
ACTS
ACS
High-level output voltage
3
ACTS
ACS
Short-circuit output current
2 ,4
ACTS/ACS
Power dissipation
2, 8, 9
Output current
10
(Sink)
I
OH
Output current
10
(Source)
I
DDQ
ΔI
DDQ
Quiescent Supply Current
Quiescent Supply Current Delta
ACTS
V
IN
= V
DD
or V
SS
I
OL
= 8.0mA
I
OL
= 100μA
I
OH
= -8.0mA
I
OH
= -100μA
V
O
= V
DD
and V
SS
C
L
= 50pF
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
IN
= V
DD
or V
SS
V
OH
= V
DD
- 0.4V
V
DD
= 5.5V
For input under test
V
IN
= V
DD
- 2.1V
For all other inputs
V
IN
= V
DD
or V
SS
V
DD
= 5.5V
C
IN
C
OUT
Input capacitance
5
Output capacitance
5
ƒ
= 1MHz @ 0V
ƒ
= 1MHz @ 0V
15
15
pF
pF
10
1.6
μA
mA
-8
mA
8
.7V
DD
V
DD
- 0.25
-200
200
2.0
.5V
DD
.7V
DD
-1
1
0.40
0.25
CONDITION
MIN
MAX
0.8
.3V
DD
UNIT
V
V
IH
V
I
IN
V
OL
μA
V
V
OH
V
I
OS
P
total
I
OL
mA
mW/
MHz
mA
3
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%, -
50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are
guaranteed to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density
≤
5.0E5 amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765
pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose
≤
1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output
10. This value is guaranteed based on characterization data, but not tested.
4
AC ELECTRICAL CHARACTERISTICS
2
(V
DD
= 5.0V
±10%;
V
SS
= 0V
1
, -55°C < T
C
< +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
Why do we need to debounce buttons?Key debounce The switch used for the common keys is a mechanical elastic switch. When the mechanical contacts are opened and closed, due to the elastic effect of the...
What does the statement CE_ADS1211=1: SCLK=O; CE_ADS1211=0: mean? Is it a falling edge trigger? CE is the chip select signal, which is valid at low level, and SCLK is the clock signal....
Prize-winning live broadcast: TI low-power MCU products and Zigbee wireless solutions video playback summary!Session 1: MSP430 low-power analog peripherals enable portable home healthcare productsSess...
The most complete and basic single-chip microcomputer experiment C language and assembly language program code. Flowing lights, digital tubes, clocks, LCDs, interrupts, buttons, DC motors, etc. All th...
In the early 1990s, portable phones were all the rage. With the rapid development of electronic technology, today's mobile phones can not only send emails and text messages, but also take photos, ch...[Details]
1. Introduction
At present, with the continuous development of modern medical devices, especially electronic instruments directly connected to the human body, in addition to the increasingly high...[Details]
Human body information monitoring is an emerging field. People envision developing wireless electroencephalogram (EEG) monitoring equipment to diagnose epilepsy patients. Wearable wireless EEG can ...[Details]
Digital-to-analog converters (ADCs) provide the critical conversion of analog signals to digital signals in many systems. They perform amplitude quantization of an analog input signal to a binary fini...[Details]
Introduction
The market for wireless telemetry products is developing rapidly. Recently, the industry has also set off a revolution in wireless applications. Wireless telemetry technol...[Details]
Preface
Sleep apnea is a very common sleep breathing disease. According to research, about 24% of adult men and 9% of adult women, or more than 2 million people, suffer from this disease ...[Details]
With the rapid development of computer technology, embedded image systems are widely used in office equipment, manufacturing and process design, medical, monitoring, sanitary equipment, transportat...[Details]
To ensure the success of China's TD-SCDMA network commercialization, operators and equipment suppliers need to conduct a large number of tests on networked equipment, among which RF testing is...[Details]
Over the past 15 to 20 years, automotive power MOSFETs have evolved from an initial technical topic to a thriving commercial sector. Power MOSFETs were chosen because they can withstand transient ...[Details]
0Introduction
In oil drilling, accurate measurement of wellbore posture is the premise of wellbore trajectory control. To this end, this paper fully combines the advantages of single-chip ...[Details]
Broadband services supporting triple play voice, video and data are evolving for first mile customers (small businesses and homes). A key factor in this FTTx evolution is GPON (Gigabit Passive Opti...[Details]
At present, the IEEE802.11 wireless LAN standard is widely used in voice communication, wireless office and other fields, but it is still mainly limited to wireless communication on general platfor...[Details]
Introduction With the continuous development of economy, people's demand for automobiles is increasing day by day. Correspondingly, automobile consumer groups are becoming more and more mature. It...[Details]
In a Class D audio power amplifier, the preamplifier is a relatively important module. It is located at the front of the entire topology and completes the processing of the input signal source,...[Details]
This article will discuss a common problem in wireless mobile data reception.
Problems facing RF receivers
The common problem faced by RF receivers is that the same hardware must be used ...[Details]
stm32/stm8
京公网安备 11010802033920号
EEWORLD
