20V P-Channel Power MOSFET
General Description
The AAT7157 low threshold 20V, dual P-Channel
MOSFET is a member of AnalogicTech™'s
TrenchDMOS™ product family. Using an ultra-high
density proprietary TrenchDMOS technology the
AAT7157 is designed for use as a load switch in
battery powered applications and protection in bat-
tery packs.
AAT7157
Features
•
•
•
V
DS(MAX)
= -20V
I
D(MAX)
1
= -5.8A @ 25°C
Low R
DS(ON)
:
• 36 mΩ @ V
GS
= -4.5V
• 62 mΩ @ V
GS
= -2.5V
Dual SOP-8L Package
Applications
•
•
Battery Packs
Battery-powered portable equipment
D1
8
Top View
D1
7
D2
6
D2
5
1
S1
2
G1
3
S2
4
G2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
(T
A
=25°C unless otherwise noted)
Value
-20
±12
±5.8
±4.6
±24
-1.5
2.0
1.25
-55 to 150
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150°C
1
Units
V
T
A
= 25°C
T
A
= 70°C
1
Pulsed Drain Current
2
Continuous Source Current (Source-Drain Diode)
Maximum Power Dissipation
1
A
T
A
= 25°C
T
A
= 70°C
W
°C
Operating Junction and Storage Temperature Range
Thermal Characteristics
Symbol
R
θJA
R
θJA2
R
θJF
Description
Typical Junction-to-Ambient steady state
1
Maximum Junction-to-Ambient t<10 seconds
Typical Junction-to-Foot
1
1
Value
100
62.5
35
Units
°C/W
7157.2004.04.1.0
1
20V P-Channel Power MOSFET
Electrical Characteristics
Symbol
Description
(T
J
=25°C unless otherwise noted)
Conditions
Min
-20
29
49
-24
-0.6
±100
-1
-5
12
14
2.3
5.5
10
37
36
52
-1.5
-1.5
36
62
AAT7157
Typ
Max
Units
V
mΩ
A
V
nA
µA
S
DC Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=-250µA
V
GS
=-4.5V, I
D
=-5.8A
R
DS(ON)
Drain-Source ON-Resistance
2
V
GS
=-2.5V, I
D
=-4.4A
I
D(ON)
On-State Drain Current
2
V
GS
=-4.5V, V
DS
=5V (Pulsed)
V
GS(th)
Gate Threshold Voltage
V
GS
=V
DS
, I
D
=-250µA
I
GSS
Gate-Body Leakage Current
V
GS
=±12V, V
DS
=0V
V
GS
=0V, V
DS
=-20V
I
DSS
Drain Source Leakage Current
V
GS
=0V, V
DS
=-16V, T
J
=70°C
3
g
fs
Forward Transconductance
2
V
DS
=-5V, I
D
=-5.8A
Dynamic Characteristics
3
Q
G
Total Gate Charge
V
DS
=-15V, R
D
=2.6Ω, V
GS
=-4.5V
Q
GS
Gate-Source Charge
V
DS
=-15V, R
D
=2.6Ω, V
GS
=-4.5V
Q
GD
Gate-Drain Charge
V
DS
=-15V, R
D
=2.6Ω, V
GS
=-4.5V
t
D(ON)
Turn-ON Delay
V
DS
=-15V, R
D
=2.6Ω, V
GS
=-4.5V,
t
R
Turn-ON Rise Time
V
DS
=-15V, R
D
=2.6Ω, V
GS
=-4.5V,
t
D(OFF)
Turn-OFF Delay
V
DS
=-15V, R
D
=2.6Ω, V
GS
=-4.5V,
t
F
Turn-OFF Fall Time
V
DS
=-15V, R
D
=2.6Ω, V
GS
=-4.5V,
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
2
V
GS
=0, I
S
=-5.8A
I
S
Continuous Diode Current
1
nC
R
G
=6Ω
R
G
=6Ω
R
G
=6Ω
R
G
=6Ω
ns
V
A
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10 second
pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
θJF
+ R
θFA
= R
θJA
where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
θJF
is guaranteed by design,
however R
θCA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Note 2: Pulse test: Pulse Width = 300 µs
Note 3: Guaranteed by design. Not subject to production testing.
2
7157.2004.04.1.0
20V P-Channel Power MOSFET
Typical Characteristics
(T
J
= 25ºC unless otherwise noted)
Output Characteristics
24
AAT7157
Transfer Characteristics
24
5V
4.5V
4V
3.5V
3V
18
V
D
=V
G
-55°C
25°C
125°C
18
2.5V
I
DS
(A)
I
D
(A)
2V
6
12
12
6
1.5V
0
0
0.5
1
1.5
2
2.5
3
0
0
1
2
3
4
5
V
DS
(V)
V
GS
(V)
On-Resistance vs. Drain Current
70
60
50
120
On-Resistance vs. Gate to Source Voltage
I
D
= 5.8A
100
V
GS
= 2.5 V
R
DS(ON)
(mΩ)
80
60
40
20
0
R
DS(ON)
(mΩ)
40
30
20
10
0
0
4
8
12
16
20
24
V
GS
= 4.5 V
0
1
2
3
4
5
I
D
(A)
V
GS
(V)
On-Resistance vs. Junction Temperature
1.4
1.3
0.5
Threshold Voltage
I
D
= 250µA
Normalized R
DS(ON)
V
GS(th)
Variance (V)
V
GS
= 4.5V
I
D
= 6.5A
0.4
0.3
0.2
0.1
0
-0.1
-0.2
-0.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
T
J
(°C)
T
J
(°C)
7157.2004.04.1.0
3
20V P-Channel Power MOSFET
Typical Characteristics
(T
J
= 25ºC unless otherwise noted)
Gate Charge
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
0.1
0
0.2
0.4
0.6
0.8
1
1.2
100
AAT7157
Source-Drain Diode Forward Voltage
V
D
=15V
I
D
=5.8A
10
V
GS
(V)
T
J
= 150°C
T
J
= 25°C
I
S
(A)
1
Q
G
, Charge (nC)
V
SD
(V)
Capacitance
2000
1600
Capacitance (pF)
1200
800
C
iss
C
oss
400
C
rss
0
0
5
10
15
20
V
DS
(V)
4
7157.2004.04.1.0
20V P-Channel Power MOSFET
Ordering Information
Package
SOP-8
Marking
7157
Part Number (Tape and Reel)
AAT7157IAS-T1
AAT7157
Note: Sample stock is generally held on all part numbers listed in
BOLD.
Package Information
SOP-8
3.90
±
0.10
4.90
±
0.10
6.00
±
0.20
0.375
±
0.125
1.55
±
0.20
45°
0.175
±
0.075
4°
±
4°
0.235
±
0.045
0.825
±
0.445
0.42
±
0.09
×
8
1.27 BSC
All dimensions in millimeters.
7157.2004.04.1.0
5
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