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AOD442

Description
N-Channel Enhancement Mode Field Effect Transistor
File Size164KB,5 Pages
ManufacturerETC
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AOD442 Overview

N-Channel Enhancement Mode Field Effect Transistor

Rev 2: Dec 2004
AOD442, AOD442L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD442 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. AOD442L ( Green Product ) is offered in
a lead-free package.
Features
V
DS
(V) = 60V
I
D
= 38A
R
DS(ON)
< 20mΩ (V
GS
= 10V)
R
DS(ON)
< 25mΩ (V
GS
= 4.5V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
B,G
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
T
C
=25°C
Power Dissipation
T
C
=100°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
B
C
Maximum
60
±20
38
27
60
30
140
60
30
-55 to 175
Units
V
V
A
A
mJ
W
°C
T
C
=25°C
G
B
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
Symbol
t
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
17.4
51
1.8
Max
25
60
2.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.

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AOD442 AOD442L
Description N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor
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