HM6264BLSP-10L datasheet, PDF - EEWORLD Datasheet

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HM6264BLSP-10L: Description8K X 8 STANDARD SRAM, 100 ns, PDIP28; Categorystorage storage; File Size79KB，15 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HM6264BLSP-10L Overview

8K X 8 STANDARD SRAM, 100 ns, PDIP28

HM6264BLSP-10L Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Hitachi （Renesas ）
Parts packaging code	DIP
package instruction	DIP, DIP28,.3
Contacts	28
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum access time	100 ns
I/O type	COMMON
JESD-30 code	R-PDIP-T28
JESD-609 code	e0
length	36 mm
memory density	65536 bi
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	28
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum seat height	5.08 mm
Maximum standby current	0.000025 A
Minimum standby current	2 V
Maximum slew rate	0.045 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	7.62 mm

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HM6264B Series

64 k SRAM (8-kword

8-bit)

ADE-203-454B (Z)

Rev. 2.0

Nov. 1997

Description

The Hitachi HM6264B is 64k-bit static RAM organized 8-kword

8-bit. It realizes higher performance

and low power consumption by 1.5

µm

CMOS process technology. The device, packaged in 450 mil

SOP (foot print pitch width), 600 mil plastic DIP, 300 mil plastic DIP, is available for high density

mounting.

Features

•

High speed

Fast access time: 85/100 ns (max)

•

Low power

Standby: 10

µW

(typ)

Operation: 15 mW (typ) (f = 1 MHz)

•

Single 5 V supply

•

Completely static memory

No clock or timing strobe required

•

Equal access and cycle times

•

Common data input and output

Three state output

•

Directly TTL compatible

All inputs and outputs

•

Battery backup operation capability

HM6264BLSP-10L Related Products

	HM6264BLSP-10L	HM6264BLFP-10	HM6264BLFP-8LT	HM6264BLP-10L	HM6264BLP-8L	HM6264B	HM6264BLFP-10LT	HM6264BLSP-8L
Description	8K X 8 STANDARD SRAM, 100 ns, PDIP28	8K X 8 STANDARD SRAM, 100 ns, PDIP28	8K X 8 STANDARD SRAM, 100 ns, PDIP28	8K X 8 STANDARD SRAM, 100 ns, PDIP28	8K X 8 STANDARD SRAM, 100 ns, PDIP28	8K X 8 STANDARD SRAM, 100 ns, PDIP28	8K X 8 STANDARD SRAM, 100 ns, PDIP28	8K X 8 STANDARD SRAM, 100 ns, PDIP28
memory width	8	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1	1
Number of terminals	28	28	28	28	28	28	28	28
Maximum operating temperature	70 °C	70 Cel	70 °C	70 °C	70 °C	70 Cel	70 °C	70 °C
organize	8KX8	8K X 8	8KX8	8KX8	8KX8	8K X 8	8KX8	8KX8
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	THROUGH-HOLE	THROUGH-HOLE	GULL WING	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	GULL WING	THROUGH-HOLE
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maker	Hitachi （Renesas ）	-	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	-	Hitachi （Renesas ）	Hitachi （Renesas ）
Parts packaging code	DIP	-	SOIC	DIP	DIP	-	SOIC	DIP
package instruction	DIP, DIP28,.3	-	SOP, SOP28,.45	DIP, DIP28,.6	DIP, DIP28,.6	-	SOP, SOP28,.45	DIP, DIP28,.3
Contacts	28	-	28	28	28	-	28	28
Reach Compliance Code	unknow	-	unknow	unknow	unknow	-	unknown	unknow
ECCN code	EAR99	-	EAR99	EAR99	EAR99	-	EAR99	EAR99
Maximum access time	100 ns	-	85 ns	100 ns	85 ns	-	100 ns	85 ns
I/O type	COMMON	-	COMMON	COMMON	COMMON	-	COMMON	COMMON
JESD-30 code	R-PDIP-T28	-	R-PDSO-G28	R-PDIP-T28	R-PDIP-T28	-	R-PDSO-G28	R-PDIP-T28
length	36 mm	-	18 mm	35.6 mm	35.6 mm	-	18 mm	36 mm
memory density	65536 bi	-	65536 bi	65536 bi	65536 bi	-	65536 bit	65536 bi
Memory IC Type	STANDARD SRAM	-	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	-	STANDARD SRAM	STANDARD SRAM
Number of ports	1	-	1	1	1	-	1	1
word count	8192 words	-	8192 words	8192 words	8192 words	-	8192 words	8192 words
character code	8000	-	8000	8000	8000	-	8000	8000
Operating mode	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS
Output characteristics	3-STATE	-	3-STATE	3-STATE	3-STATE	-	3-STATE	3-STATE
Exportable	YES	-	YES	YES	YES	-	YES	YES
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	-	SOP	DIP	DIP	-	SOP	DIP
Encapsulate equivalent code	DIP28,.3	-	SOP28,.45	DIP28,.6	DIP28,.6	-	SOP28,.45	DIP28,.3
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	-	SMALL OUTLINE	IN-LINE	IN-LINE	-	SMALL OUTLINE	IN-LINE
Parallel/Serial	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL	-	PARALLEL	PARALLEL
power supply	5 V	-	5 V	5 V	5 V	-	5 V	5 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
Maximum seat height	5.08 mm	-	3 mm	5.7 mm	5.7 mm	-	3 mm	5.08 mm
Maximum standby current	0.000025 A	-	0.000025 A	0.000025 A	0.000025 A	-	0.000025 A	0.000025 A
Minimum standby current	2 V	-	2 V	2 V	2 V	-	2 V	2 V
Maximum slew rate	0.045 mA	-	0.045 mA	0.045 mA	0.045 mA	-	0.045 mA	0.045 mA
Maximum supply voltage (Vsup)	5.5 V	-	5.5 V	5.5 V	5.5 V	-	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	-	4.5 V	4.5 V	4.5 V	-	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	-	5 V	5 V	5 V	-	5 V	5 V
surface mount	NO	-	YES	NO	NO	-	YES	NO
technology	CMOS	-	CMOS	CMOS	CMOS	-	CMOS	CMOS
Terminal pitch	2.54 mm	-	1.27 mm	2.54 mm	2.54 mm	-	1.27 mm	2.54 mm
width	7.62 mm	-	8.4 mm	15.24 mm	15.24 mm	-	8.4 mm	7.62 mm

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