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HM62W16255HTTI-15

Description
4M High Speed SRAM (256-kword x 16-bit)
Categorystorage    storage   
File Size95KB,16 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric Compare View All

HM62W16255HTTI-15 Overview

4M High Speed SRAM (256-kword x 16-bit)

HM62W16255HTTI-15 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHitachi (Renesas )
Parts packaging codeTSOP2
package instructionTSOP2, TSOP44,.46,32
Contacts44
Reach Compliance Codeunknow
ECCN code3A991.B.2.A
Maximum access time15 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G44
JESD-609 codee0
length18.41 mm
memory density4194304 bi
Memory IC TypeCACHE SRAM
memory width16
Number of functions1
Number of terminals44
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP44,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
power supply3.3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.005 A
Minimum standby current3 V
Maximum slew rate0.16 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
width10.16 mm
HM62W16255HI Series
4M High Speed SRAM (256-kword
×
16-bit)
ADE-203-1038B (Z)
Rev. 2.0
Jan. 20, 2000
Description
The HM62W16255HI is a 4-Mbit high speed static RAM organized 256-kword
×
16-bit. It has realized high
speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed
circuit designing technology. It is most appropriate for the application which requires high speed, high
density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged
in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII.
Features
Single 3.3 V supply: 3.3 V
±
0.3V
Access time: 15 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 160 mA (max)
TTL standby current: 50 mA (max)
CMOS standby current: 5 mA (max)
Center V
CC
and V
SS
type pinout
Temperature range: –40 to 85°C

HM62W16255HTTI-15 Related Products

HM62W16255HTTI-15 HM62W16255HJPI-15 HM62W16255HI
Description 4M High Speed SRAM (256-kword x 16-bit) 4M High Speed SRAM (256-kword x 16-bit) 4M High Speed SRAM (256-kword x 16-bit)
Is it Rohs certified? incompatible incompatible -
Maker Hitachi (Renesas ) Hitachi (Renesas ) -
Parts packaging code TSOP2 SOJ -
package instruction TSOP2, TSOP44,.46,32 SOJ, SOJ44,.44 -
Contacts 44 44 -
Reach Compliance Code unknow unknow -
ECCN code 3A991.B.2.A 3A991.B.2.A -
Maximum access time 15 ns 15 ns -
I/O type COMMON COMMON -
JESD-30 code R-PDSO-G44 R-PDSO-J44 -
JESD-609 code e0 e0 -
length 18.41 mm 28.33 mm -
memory density 4194304 bi 4194304 bi -
Memory IC Type CACHE SRAM CACHE SRAM -
memory width 16 16 -
Number of functions 1 1 -
Number of terminals 44 44 -
word count 262144 words 262144 words -
character code 256000 256000 -
Operating mode ASYNCHRONOUS ASYNCHRONOUS -
Maximum operating temperature 85 °C 85 °C -
Minimum operating temperature -40 °C -40 °C -
organize 256KX16 256KX16 -
Output characteristics 3-STATE 3-STATE -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
encapsulated code TSOP2 SOJ -
Encapsulate equivalent code TSOP44,.46,32 SOJ44,.44 -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE -
Parallel/Serial PARALLEL PARALLEL -
power supply 3.3 V 3.3 V -
Certification status Not Qualified Not Qualified -
Maximum seat height 1.2 mm 3.76 mm -
Maximum standby current 0.005 A 0.005 A -
Minimum standby current 3 V 3 V -
Maximum slew rate 0.16 mA 0.16 mA -
Maximum supply voltage (Vsup) 3.6 V 3.6 V -
Minimum supply voltage (Vsup) 3 V 3 V -
Nominal supply voltage (Vsup) 3.3 V 3.3 V -
surface mount YES YES -
technology CMOS CMOS -
Temperature level INDUSTRIAL INDUSTRIAL -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Terminal form GULL WING J BEND -
Terminal pitch 0.8 mm 1.27 mm -
Terminal location DUAL DUAL -
width 10.16 mm 10.16 mm -
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