HM62W16255HCTT-10 datasheet, PDF

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HM62W16255HCTT-10: Description4M High Speed SRAM (256-kword x 16-bit); Categorystorage storage; File Size99KB，18 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HM62W16255HCTT-10 Overview

4M High Speed SRAM (256-kword x 16-bit)

HM62W16255HCTT-10 Parametric

Parameter Name	Attribute value
Maker	Hitachi （Renesas ）
Parts packaging code	TSOP2
package instruction	TSOP2, TSOP44,.46,32
Contacts	44
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	10 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G44
length	18.41 mm
memory density	4194304 bit
Memory IC Type	CACHE SRAM
memory width	16
Number of functions	1
Number of terminals	44
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP44,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.005 A
Minimum standby current	2 V
Maximum slew rate	0.145 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
width	10.16 mm
Base Number Matches	1

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HM62W16255HC Series

4M High Speed SRAM (256-kword

16-bit)

ADE-203-1200 (Z)

Preliminary

Rev. 0.0

Sep. 1, 2000

Description

The HM62W16255HC is a 4-Mbit high speed static RAM organized 256-kword

16-bit. It has realized high

speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

technology. It is most appropriate for the application which requires high speed, high density memory and

wide bit width configuration, such as cache and buffer memory in system. The HM62W16255HC is

packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.

Features

•

Single 3.3 V supply: 3.3 V

0.3 V

•

Access time: 10 ns (max)

•

Completely static memory



No clock or timing strobe required

•

Equal access and cycle times

•

Directly TTL compatible



All inputs and outputs

•

Operating current: 145 mA (max)

•

TTL standby current: 40 mA (max)

•

CMOS standby current: 5 mA (max)

: 1 mA (max) (L-version)

•

Data retention current: 0.6 mA (max) (L-version)

•

Data retention voltage: 2.0 V (min) (L-version)

•

Center V

and V

type pinout

Preliminary: The specification of this device are subject to change without notice. Please contact your nearest

Hitachi’s Sales Dept. regarding specification.

HM62W16255HCTT-10 Related Products

	HM62W16255HCTT-10	HM62W16255HCJP-10	HM62W16255HCLTT-10	HM62W16255HC	HM62W16255HCLJP-10
Description	4M High Speed SRAM (256-kword x 16-bit)	4M High Speed SRAM (256-kword x 16-bit)	4M High Speed SRAM (256-kword x 16-bit)	4M High Speed SRAM (256-kword x 16-bit)	4M High Speed SRAM (256-kword x 16-bit)
Maker	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	-	Hitachi （Renesas ）
Parts packaging code	TSOP2	SOJ	TSOP2	-	SOJ
package instruction	TSOP2, TSOP44,.46,32	SOJ, SOJ44,.44	TSOP2, TSOP44,.46,32	-	SOJ, SOJ44,.44
Contacts	44	44	44	-	44
Reach Compliance Code	unknown	unknow	unknow	-	unknow
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	-	3A991.B.2.A
Maximum access time	10 ns	10 ns	10 ns	-	10 ns
I/O type	COMMON	COMMON	COMMON	-	COMMON
JESD-30 code	R-PDSO-G44	R-PDSO-J44	R-PDSO-G44	-	R-PDSO-J44
length	18.41 mm	28.33 mm	18.41 mm	-	28.33 mm
memory density	4194304 bit	4194304 bi	4194304 bi	-	4194304 bi
Memory IC Type	CACHE SRAM	CACHE SRAM	CACHE SRAM	-	CACHE SRAM
memory width	16	16	16	-	16
Number of functions	1	1	1	-	1
Number of terminals	44	44	44	-	44
word count	262144 words	262144 words	262144 words	-	262144 words
character code	256000	256000	256000	-	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	-	70 °C
organize	256KX16	256KX16	256KX16	-	256KX16
Output characteristics	3-STATE	3-STATE	3-STATE	-	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
encapsulated code	TSOP2	SOJ	TSOP2	-	SOJ
Encapsulate equivalent code	TSOP44,.46,32	SOJ44,.44	TSOP44,.46,32	-	SOJ44,.44
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	-	SMALL OUTLINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	-	PARALLEL
power supply	3.3 V	3.3 V	3.3 V	-	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified
Maximum seat height	1.2 mm	3.76 mm	1.2 mm	-	3.76 mm
Maximum standby current	0.005 A	0.005 A	0.001 A	-	0.001 A
Minimum standby current	2 V	2 V	2 V	-	2 V
Maximum slew rate	0.145 mA	0.145 mA	0.145 mA	-	0.145 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	-	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	-	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	-	3.3 V
surface mount	YES	YES	YES	-	YES
technology	CMOS	CMOS	CMOS	-	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	-	COMMERCIAL
Terminal form	GULL WING	J BEND	GULL WING	-	J BEND
Terminal pitch	0.8 mm	1.27 mm	0.8 mm	-	1.27 mm
Terminal location	DUAL	DUAL	DUAL	-	DUAL
width	10.16 mm	10.16 mm	10.16 mm	-	10.16 mm

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