HM62W8511HLJP-15 datasheet, PDF

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HM62W8511HLJP-15: Description4M High Speed SRAM (512-kword x 8-bit); Categorystorage storage; File Size71KB，13 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HM62W8511HLJP-15 Overview

4M High Speed SRAM (512-kword x 8-bit)

HM62W8511HLJP-15 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Hitachi （Renesas ）
Parts packaging code	SOJ
package instruction	SOJ, SOJ36,.44
Contacts	36
Reach Compliance Code	unknow
ECCN code	3A991.B.2.A
Maximum access time	15 ns
Other features	TTL COMPATIBLE INPUTS/OUTPUTS
I/O type	COMMON
JESD-30 code	R-PDSO-J36
JESD-609 code	e0
length	23.25 mm
memory density	4194304 bi
Memory IC Type	CACHE SRAM
memory width	8
Number of functions	1
Number of terminals	36
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ36,.44
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	3.76 mm
Maximum standby current	0.0003 A
Minimum standby current	2 V
Maximum slew rate	0.19 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL
width	10.16 mm

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HM62W8511H Series

4M High Speed SRAM (512-kword

8-bit)

ADE-203-750D (Z)

Rev. 1.0

Sep. 15, 1998

Description

The HM62W8511H is a 4-Mbit high speed static RAM organized 512-kword

8-bit. It has realized high

speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed

circuit designing technology. It is most appropriate for the application which requires high speed, high

density memory and wide bit width configuration, such as cache and buffer memory in system. The

HM62W8511H is packaged in 400-mil 36-pin SOJ for high density surface mounting.

Features

•

Single supply : 3.3 V

0.3 V

•

Access time 12/15 ns (max)

•

Completely static memory



No clock or timing strobe required

•

Equal access and cycle times

•

Directly TTL compatible



All inputs and outputs

•

Operating current : 150/130 mA (max)

•

TTL standby current : 60/50 mA (max)

•

CMOS standby current : 5 mA (max)

: 1 mA (max) (L-version)

•

Data retension current : 0.6 mA (max) (L-version)

•

Data retension voltage : 2 V (min) (L-version)

•

Center V

and V

type pinout

HM62W8511HLJP-15 Related Products

	HM62W8511HLJP-15	HM62W8511H	HM62W8511HJP-12	HM62W8511HLJP-12	HM62W8511HJP-15
Description	4M High Speed SRAM (512-kword x 8-bit)	4M High Speed SRAM (512-kword x 8-bit)	4M High Speed SRAM (512-kword x 8-bit)	4M High Speed SRAM (512-kword x 8-bit)	4M High Speed SRAM (512-kword x 8-bit)
Maker	Hitachi （Renesas ）	-	Hitachi （Renesas ）	-	Hitachi （Renesas ）
Parts packaging code	SOJ	-	SOJ	SOJ	SOJ
package instruction	SOJ, SOJ36,.44	-	SOJ, SOJ36,.44	SOJ, SOJ36,.44	SOJ, SOJ36,.44
Contacts	36	-	36	36	36
Reach Compliance Code	unknow	-	unknow	unknow	unknow
ECCN code	3A991.B.2.A	-	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	15 ns	-	12 ns	12 ns	15 ns
Other features	TTL COMPATIBLE INPUTS/OUTPUTS	-	TTL COMPATIBLE INPUTS/OUTPUTS	TTL COMPATIBLE INPUTS/OUTPUTS	TTL COMPATIBLE INPUTS/OUTPUTS
I/O type	COMMON	-	COMMON	COMMON	COMMON
JESD-30 code	R-PDSO-J36	-	R-PDSO-J36	R-PDSO-J36	R-PDSO-J36
length	23.25 mm	-	23.25 mm	23.25 mm	23.25 mm
memory density	4194304 bi	-	4194304 bi	4194304 bi	4194304 bi
Memory IC Type	CACHE SRAM	-	CACHE SRAM	CACHE SRAM	CACHE SRAM
memory width	8	-	8	8	8
Number of functions	1	-	1	1	1
Number of terminals	36	-	36	36	36
word count	524288 words	-	524288 words	524288 words	524288 words
character code	512000	-	512000	512000	512000
Operating mode	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	-	70 °C	70 °C	70 °C
organize	512KX8	-	512KX8	512KX8	512KX8
Output characteristics	3-STATE	-	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SOJ	-	SOJ	SOJ	SOJ
Encapsulate equivalent code	SOJ36,.44	-	SOJ36,.44	SOJ36,.44	SOJ36,.44
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Parallel/Serial	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL
power supply	3.3 V	-	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	3.76 mm	-	3.76 mm	3.76 mm	3.76 mm
Maximum standby current	0.0003 A	-	0.01 A	0.0003 A	0.01 A
Minimum standby current	2 V	-	3 V	2 V	3 V
Maximum slew rate	0.19 mA	-	0.2 mA	0.2 mA	0.19 mA
Maximum supply voltage (Vsup)	3.6 V	-	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	-	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	-	3.3 V	3.3 V	3.3 V
surface mount	YES	-	YES	YES	YES
technology	CMOS	-	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	-	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	J BEND	-	J BEND	J BEND	J BEND
Terminal pitch	1.27 mm	-	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	-	DUAL	DUAL	DUAL
width	10.16 mm	-	10.16 mm	10.16 mm	10.16 mm

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