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HMBTA06

Description
NPN SILICON TRANSISTOR
File Size30KB,3 Pages
ManufacturerHSMC
Websitehttp://www.hsmc.com.tw/
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HMBTA06 Overview

NPN SILICON TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6840
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 1/3
HMBTA06
NPN SILICON TRANSISTOR
Description
Amplifier Transistor
Absolute Maximum Ratings
SOT-23
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°C
Junction Temperature.................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 80 V
VCEO Collector to Emitter Voltage...................................................................................... 80 V
VEBO Emitter to Base Voltage.............................................................................................. 4 V
IC Collector Current........................................................................................................ 500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Min.
80
80
4
-
-
-
-
50
50
100
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
0.25
1.2
-
-
-
Unit
V
V
V
nA
nA
V
V
Test Conditions
IC=100uA
IC=1mA
IE=100uA
VCB=80V
VCE=60V
IC=100mA, IB=10mA
IC=100mA, VCE=1V
IC=10mA, VCE=1V
IC=100mA, VCE=1V
IC=10mA, VCE=2V, f=100MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
HMBTA06
HSMC Product Specification

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HMBTA06
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