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2SC5509-T2FB-A

Description
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINIMOLD, M04, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size81KB,10 Pages
ManufacturerNEC Electronics
Environmental Compliance
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2SC5509-T2FB-A Overview

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINIMOLD, M04, 4 PIN

2SC5509-T2FB-A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNEC Electronics
package instructionSMALL OUTLINE, R-PDSO-F4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-based maximum capacity0.75 pF
Collector-emitter maximum voltage3.3 V
ConfigurationSINGLE
highest frequency bandL BAND
JESD-30 codeR-PDSO-F4
JESD-609 codee6
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)15000 MHz
Base Number Matches1
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5509
NPN SILICON RF TRANSISTOR
FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES
• Ideal for medium output power amplification
• NF = 1.2 dB TYP., G
a
= 12 dB TYP. @ V
CE
= 2 V, I
C
= 10 mA, f = 2 GHz
• Maximum available power gain: MAG = 14 dB TYP. @ V
CE
= 2 V, I
C
= 50 mA, f = 2 GHz
• f
T
= 25 GHz technology adopted
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number
2SC5509
2SC5509-T2
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
15
3.3
1.5
100
190
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Free Air
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10009EJ02V0DS (2nd edition)
Date Published September 2004 CP(K)
Printed in Japan
The mark
shows major revised points.
©
NEC Compound Semiconductor Devices, Ltd. 2001, 2004

2SC5509-T2FB-A Related Products

2SC5509-T2FB-A 2SC5509-FB 2SC5509-FB-A 2SC5509-T2FB
Description RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINIMOLD, M04, 4 PIN RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINIMOLD, M04, 4 PIN RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINIMOLD, M04, 4 PIN RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINIMOLD, M04, 4 PIN
Is it lead-free? Lead free Contains lead Lead free Contains lead
Is it Rohs certified? conform to incompatible conform to incompatible
Maker NEC Electronics NEC Electronics NEC Electronics NEC Electronics
package instruction SMALL OUTLINE, R-PDSO-F4 SMALL OUTLINE, R-PDSO-F4 SMALL OUTLINE, R-PDSO-F4 SMALL OUTLINE, R-PDSO-F4
Contacts 4 4 4 4
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Other features LOW NOISE LOW NOISE LOW NOISE LOW NOISE
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-based maximum capacity 0.75 pF 0.75 pF 0.75 pF 0.75 pF
Collector-emitter maximum voltage 3.3 V 3.3 V 3.3 V 3.3 V
Configuration SINGLE SINGLE SINGLE SINGLE
highest frequency band L BAND L BAND L BAND L BAND
JESD-30 code R-PDSO-F4 R-PDSO-F4 R-PDSO-F4 R-PDSO-F4
JESD-609 code e6 e0 e6 e0
Number of components 1 1 1 1
Number of terminals 4 4 4 4
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal surface TIN BISMUTH TIN LEAD TIN BISMUTH TIN LEAD
Terminal form FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 15000 MHz 15000 MHz 15000 MHz 15000 MHz
Base Number Matches 1 1 1 1
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