2SC5509-FB-A datasheet, PDF - EEWORLD Datasheet

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2SC5509-FB-A: DescriptionRF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINIMOLD, M04, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size81KB，10 Pages; ManufacturerNEC Electronics; Environmental Compliance

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2SC5509-FB-A Overview

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINIMOLD, M04, 4 PIN

2SC5509-FB-A Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	NEC Electronics
package instruction	SMALL OUTLINE, R-PDSO-F4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	0.75 pF
Collector-emitter maximum voltage	3.3 V
Configuration	SINGLE
highest frequency band	L BAND
JESD-30 code	R-PDSO-F4
JESD-609 code	e6
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN BISMUTH
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	15000 MHz
Base Number Matches	1

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DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5509

NPN SILICON RF TRANSISTOR

FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

FEATURES

• Ideal for medium output power amplification

• NF = 1.2 dB TYP., G

= 12 dB TYP. @ V

= 2 V, I

= 10 mA, f = 2 GHz

• Maximum available power gain: MAG = 14 dB TYP. @ V

= 2 V, I

= 50 mA, f = 2 GHz

• f

= 25 GHz technology adopted

• Flat-lead 4-pin thin-type super minimold (M04) package

ORDERING INFORMATION

Part Number

2SC5509

2SC5509-T2

Quantity

50 pcs (Non reel)

3 kpcs/reel

Supplying Form

• 8 mm wide embossed taping

• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape

Remark

To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T

= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

Symbol

CBO

CEO

EBO

tot

Note

Ratings

3.3

1.5

100

190

150

−65

to +150

Unit

°C

stg

Note

Free Air

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10009EJ02V0DS (2nd edition)

Date Published September 2004 CP(K)

Printed in Japan

The mark

shows major revised points.

NEC Compound Semiconductor Devices, Ltd. 2001, 2004

2SC5509-FB-A Related Products

	2SC5509-FB-A	2SC5509-T2FB-A	2SC5509-FB	2SC5509-T2FB
Description	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINIMOLD, M04, 4 PIN	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINIMOLD, M04, 4 PIN	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINIMOLD, M04, 4 PIN	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, SUPER MINIMOLD, M04, 4 PIN
Is it lead-free?	Lead free	Lead free	Contains lead	Contains lead
Is it Rohs certified?	conform to	conform to	incompatible	incompatible
Maker	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics
package instruction	SMALL OUTLINE, R-PDSO-F4	SMALL OUTLINE, R-PDSO-F4	SMALL OUTLINE, R-PDSO-F4	SMALL OUTLINE, R-PDSO-F4
Contacts	4	4	4	4
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A
Collector-based maximum capacity	0.75 pF	0.75 pF	0.75 pF	0.75 pF
Collector-emitter maximum voltage	3.3 V	3.3 V	3.3 V	3.3 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
highest frequency band	L BAND	L BAND	L BAND	L BAND
JESD-30 code	R-PDSO-F4	R-PDSO-F4	R-PDSO-F4	R-PDSO-F4
JESD-609 code	e6	e6	e0	e0
Number of components	1	1	1	1
Number of terminals	4	4	4	4
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal surface	TIN BISMUTH	TIN BISMUTH	TIN LEAD	TIN LEAD
Terminal form	FLAT	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	15000 MHz	15000 MHz	15000 MHz	15000 MHz
Base Number Matches	1	1	1	1

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