BA481153 datasheet, PDF - EEWORLD Datasheet

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BA481153: DescriptionDIODE SILICON, UHF BAND, MIXER DIODE, DO-34, Microwave Mixer Diode; CategoryDiscrete semiconductor diode; File Size63KB，3 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BA481153 Overview

DIODE SILICON, UHF BAND, MIXER DIODE, DO-34, Microwave Mixer Diode

BA481153 Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	O-LALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	4 V
Shell connection	ISOLATED
Configuration	SINGLE
Maximum diode capacitance	1.1 pF
Diode component materials	SILICON
Diode type	MIXER DIODE
Maximum forward voltage (VF)	0.6 V
frequency band	ULTRA HIGH FREQUENCY
JEDEC-95 code	DO-34
JESD-30 code	O-LALF-W2
maximum noise index	8 dB
Number of components	1
Number of terminals	2
Maximum operating temperature	100 °C
Maximum output current	30 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum reverse current	10 µA
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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BA481153 Related Products

	BA481153	BA481116	BA481143	BA481113	BA481136	BA481133
Description	DIODE SILICON, UHF BAND, MIXER DIODE, DO-34, Microwave Mixer Diode	DIODE SILICON, UHF BAND, MIXER DIODE, DO-34, Microwave Mixer Diode	DIODE SILICON, UHF BAND, MIXER DIODE, DO-34, Microwave Mixer Diode	DIODE SILICON, UHF BAND, MIXER DIODE, DO-34, Microwave Mixer Diode	DIODE SILICON, UHF BAND, MIXER DIODE, DO-34, Microwave Mixer Diode	DIODE SILICON, UHF BAND, MIXER DIODE, DO-34, Microwave Mixer Diode
package instruction	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Minimum breakdown voltage	4 V	4 V	4 V	4 V	4 V	4 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum diode capacitance	1.1 pF	1.1 pF	1.1 pF	1.1 pF	1.1 pF	1.1 pF
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	MIXER DIODE	MIXER DIODE	MIXER DIODE	MIXER DIODE	MIXER DIODE	MIXER DIODE
Maximum forward voltage (VF)	0.6 V	0.6 V	0.6 V	0.6 V	0.6 V	0.6 V
frequency band	ULTRA HIGH FREQUENCY	ULTRA HIGH FREQUENCY	ULTRA HIGH FREQUENCY	ULTRA HIGH FREQUENCY	ULTRA HIGH FREQUENCY	ULTRA HIGH FREQUENCY
JEDEC-95 code	DO-34	DO-34	DO-34	DO-34	DO-34	DO-34
JESD-30 code	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
maximum noise index	8 dB	8 dB	8 dB	8 dB	8 dB	8 dB
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	100 °C	100 °C	100 °C	100 °C	100 °C	100 °C
Maximum output current	30 A	30 A	30 A	30 A	30 A	30 A
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum reverse current	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maker	NXP	NXP	-	NXP	NXP	NXP

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