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HN58V65API-10

Description
64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version
Categorystorage    storage   
File Size216KB,28 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

HN58V65API-10 Overview

64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version

HN58V65API-10 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Parts packaging codeDIP
package instruction0.600 INCH, PLASTIC, DIP-28
Contacts28
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time100 ns
command user interfaceNO
Data pollingYES
JESD-30 codeR-PDIP-T28
length35.6 mm
memory density65536 bi
Memory IC TypeEEPROM
memory width8
Humidity sensitivity level1
Number of functions1
Number of terminals28
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8KX8
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.6
Package shapeRECTANGULAR
Package formIN-LINE
page size64 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply3/5 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height5.7 mm
Maximum standby current0.000005 A
Maximum slew rate0.025 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3.6 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
width15.24 mm
Maximum write cycle time (tWC)10 ms
HN58V65AI Series
HN58V66AI Series
HN58V65A-SR Series
HN58V66A-SR Series
64k EEPROM (8-kword
×
8-bit)
Ready/Busy function,
RES
function (HN58V66A)
Wide Temperature Range version
REJ03C0153-0300Z
(Previous ADE-203-759B(Z) Rev.2.0)
Rev. 3.00
Feb.02.2004
Description
Renesas Technology’s HN58V65A series and HN58V66A series are electrically erasable and
programmable EEPROM’s organized as 8192-word
×
8-bit. They have realized high speed, low power
consumption and high reliability by employing advanced MNOS memory technology and CMOS process
and circuitry technology. They also have a 64-byte page programming function to make their write
operations faster.
Features
Single supply: 2.7 to 5.5 V
Access time:
100 ns (max) at 2.7 V
V
CC
< 4.5 V
70 ns (max) at 4.5 V
V
CC
5.5 V
Power dissipation:
Active: 20 mW/MHz (typ)
Standby: 110
µW
(max)
On-chip latches: address, data,
CE, OE, WE
Automatic byte write: 10 ms (max)
Automatic page write (64 bytes): 10 ms (max)
Ready/Busy
Data
polling and Toggle bit
Data protection circuit on power on/off
Rev.3.00, Feb.02.2004, page 1 of 26

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