CEP62A3/CEB62A3
Feb. 2003
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
30V , 60A , R
DS(ON)
=10m
Ω
@V
GS
=10V.
R
DS(ON)
=15m
Ω
@V
GS
=4.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handling capability.
TO-220 & TO-263 package.
D
4
4
D
G
G
D
S
G
S
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
Drain-Source Diode Forward Current
Maximum Power Dissipation
@Tc=25 C
Derate above 25 C
Operating and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Limit
30
20
60
180
60
68
0.45
-55 to 175
Unit
V
V
A
A
A
W
W/ C
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
R
JA
4-177
2.2
62.5
C/W
C/W
CEP62A3/CEB62A3
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
4
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
I
D(ON)
g
FS
b
Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 26A
V
GS
= 4.5V, I
D
= 21A
V
GS
= 10V, V
DS
= 5V
V
DS
= 10V, I
D
= 26A
Min Typ Max Unit
30
1
V
µA
100 nA
1
8.5
12
60
36
1100
3
10
15
V
mΩ
mΩ
A
S
P
F
P
F
P
F
ON CHARACTERISTICS
a
Gate Threshold Voltage
Drain-Source On-State Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
b
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
600
180
19
36
97
68
35
6
11
48
72
175
135
42
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
V
DD
= 15V,
I
D
=60A,
V
GEN
= 10V
R
G
=24Ω
ns
ns
ns
ns
nC
nC
nC
V
DS
=15V
,
I
D
= 30A
,
V
GS
=10V
4-178
CEP62A3/CEB62A3
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
V
SD
Condition
V
GS
= 0V, Is =26A
Min Typ Max Unit
1.3
V
4
DRAIN-SOURCE DIODE CHARACTERISTICS
a
Notes
a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
60
V
GS
=10,8,6,4V
50
50
60
I
D
, Drain Current(A)
I
D
, Drain Current (A)
40
30
20
10
0
0
1
2
3
4
5
40
30
-55 C
20
25 C
10
0
1
2
3
4
Tj=125 C
V
GS
=3V
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
R
DS(ON)
, Normalized
R
DS(ON)
,
On-Resistance(Ohms)
1800
1500
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
I
D
=26A
V
GS
=10V
C, Capacitance (pF)
1200
900
600
300
0
0
5
10
15
20
Ciss
Coss
Crss
25
30
V
DS
, Drain-to Source Voltage (V)
T
J
, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation with
Temperature
4-179
CEP62A3/CEB62A3
BV
DSS
, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.30
1.20
1.10
1.00
0.90
0.80
0.70
0.60
-50 -25
0
25 50
75 100 125 150
V
DS
=V
GS
I
D
=250 A
1.15
I
D
=250 A
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
4
0
25
50
75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
50
Figure 6. Breakdown Voltage Variation
with Temperature
50
g
FS
, Transconductance (S)
Is, Source-drain current (A)
40
30
20
10
V
DS
=10V
0
0
10
20
30
40
10
1.0
0.1
0.4
0.6
0.8
1.0
1.2
1.4
I
DS
, Drain-Source Current (A)
V
SD
, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
10
8
6
4
2
0
0
10
20
30
40
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
GS
, Gate to Source Voltage (V)
V
DS
=15V
I
D
=30A
I
D
, Drain Current (A)
10
2
RD
S(
)
ON
Lim
it
10
0
10
1
10
ms
DC
0ms
10
1m
s
s
10
0
-1
10
T
C
=25 C
Tj=175 C
Single Pulse
10
0
10
1
10
2
10
-1
Qg, Total Gate Charge (nC)
V
DS
, Drain-Source Voltage (V)
Figure 9. Gate Charge
4-180
Figure 10. Maximum Safe
Operating Area
CEP62A3/CEB62A3
V
DD
t
on
V
IN
D
V
GS
R
GEN
G
90%
4
t
off
t
r
90%
R
L
V
OUT
t
d(on)
V
OUT
t
d(off)
90%
10%
t
f
10%
INVERTED
S
V
IN
50%
10%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1
0.05
0.02
0.01
Single Pulse
P
DM
t
1
t
2
1. R
JC
(t)=r (t) * R
JC
2. R
JC
=See Datasheet
3. T
JM-
T
C
= P* R
JC
(t)
4. Duty Cycle, D=t1/t2
10
-2 -2
10
10
-1
10
0
10
1
10
2
10
3
10
4
Square Wave Pulse Duration (msec)
Figure 13. Normalized Thermal Transient Impedance Curve
4-181
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