BZX55-C8V2T/R datasheet, PDF - EEWORLD Datasheet

BZX55-C8V2T/R: DescriptionDIODE 8.2 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, HERMETIC SEALED, GLASS PACKAGE-2, Voltage Regulator Diode; CategoryDiscrete semiconductor diode; File Size42KB，7 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BZX55-C8V2T/R Overview

DIODE 8.2 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, HERMETIC SEALED, GLASS PACKAGE-2, Voltage Regulator Diode

Parameter Name	Attribute value
Maker	NXP
Parts packaging code	DO-35
package instruction	O-LALF-W2
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	TEMPERATURE COEFFICIENT IS TYPICAL
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
Maximum dynamic impedance	7 Ω
JEDEC-95 code	DO-35
JESD-30 code	O-LALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.4 W
Certification status	Not Qualified
Guideline	CECC50005-005
Nominal reference voltage	8.2 V
Maximum reverse current	0.1 µA
surface mount	NO
technology	ZENER
Terminal form	WIRE
Terminal location	AXIAL
Voltage temperatureCoeff-Max	4.5 mV/°C
Maximum voltage tolerance	5%
Working test current	5 mA
Base Number Matches	1

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176

BZX55 series

Voltage regulator diodes

Product speciﬁcation

Supersedes data of April 1992

1996 Apr 26

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