M28LV64-200XN1 datasheet, PDF - EEWORLD Datasheet

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M28LV64-200XN1: Description64K 8K x 8 LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION; Categorystorage storage; File Size106KB，18 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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M28LV64-200XN1 Overview

64K 8K x 8 LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION

M28LV64-200XN1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TSOP
package instruction	LSSOP, TSSOP28,.53,22
Contacts	28
Reach Compliance Code	_compli
ECCN code	EAR99
Is Samacsys	N
Maximum access time	200 ns
Other features	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION
command user interface	NO
Data polling	YES
Data retention time - minimum	40
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-G28
JESD-609 code	e0
length	11.8 mm
memory density	65536 bi
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	28
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8KX8
Package body material	PLASTIC/EPOXY
encapsulated code	LSSOP
Encapsulate equivalent code	TSSOP28,.53,22
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
page size	64 words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3/3.3 V
Programming voltage	3 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.25 mm
Maximum standby current	0.00002 A
Maximum slew rate	0.01 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.55 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
width	8 mm
Base Number Matches	1

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M28LV64

64K (8K x 8) LOW VOLTAGE PARALLEL EEPROM

with SOFTWARE DATA PROTECTION

NOT FOR NEW DESIGN

FAST ACCESS TIME: 200ns

SINGLE LOW VOLTAGE OPERATION

LOW POWER CONSUMPTION

FAST WRITE CYCLE:

– 64 Bytes Page Write Operation

– Byte or Page Write Cycle: 3ms Max

ENHANCED END OF WRITE DETECTION:

– Ready/Busy Open Drain Output

(only on the M28LV64)

– Data Polling

– Toggle Bit

PAGE LOAD TIMER STATUS BIT

HIGH RELIABILITY SINGLE POLYSILICON,

CMOS TECHNOLOGY:

– Endurance >100,000 Erase/Write Cycles

– Data Retention >40 Years

JEDEC APPROVED BYTEWIDE PIN OUT

SOFTWARE DATA PROTECTION

The M28LV64 is replaced by the

M28C64-xxW

DESCRIPTION

The M28LV64 is an 8K x 8 low power Parallel

EEPROM fabricated with SGS-THOMSON pro-

prietary single polysilicon CMOS technology. The

device offers fast access time with low power dis-

sipation and requires a 2.7V to 3.6V power supply.

PDIP28 (P)

PLCC32 (K)

SO28 (MS)

300 mils

TSOP28 (N)

8 x13.4mm

Figure 1. Logic Diagram

VCC

A0-A12

DQ0-DQ7

Table 1. Signal Names

A0 - A12

DQ0 - DQ7

Address Input

Data Input / Output

Write Enable

Chip Enable

Output Enable

Ready / Busy

Supply Voltage

Ground

M28LV64

RB *

VSS

AI01538B

Note:

* RB function is only available on the M28LV64.

May 1997

This is information on a product still in production bu t not recommended for new de signs.

1/18

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