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M28C16-30WNS6

Description
16 Kbit 2Kb x8 Parallel EEPROM
Categorystorage    storage   
File Size111KB,19 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

M28C16-30WNS6 Overview

16 Kbit 2Kb x8 Parallel EEPROM

M28C16-30WNS6 Parametric

Parameter NameAttribute value
MakerSTMicroelectronics
Parts packaging codeTSOP
package instructionLSSOP,
Contacts28
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Maximum access time300 ns
Other featuresENDURANCE >100000 WRITE/ERASE CYCLES; DATA RETENTION > 40 YEARS; 32 BYTE PAGE WRITE
Data retention time - minimum40
Durability100000 Write/Erase Cycles
JESD-30 codeR-PDSO-G28
length11.8 mm
memory density16384 bi
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals28
word count2048 words
character code2000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2KX8
Package body materialPLASTIC/EPOXY
encapsulated codeLSSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE, LOW PROFILE, SHRINK PITCH
Parallel/SerialPARALLEL
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.25 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.55 mm
Terminal locationDUAL
width8 mm
Base Number Matches1
M28C16A
M28C17A
16 Kbit (2Kb x8) Parallel EEPROM
FAST ACCESS TIME:
– 150ns at 5V
– 250ns at 3V
SINGLE SUPPLY VOLTAGE:
– 5V
±
10% for M28C16A and M28C17A
– 2.7V to 3.6V for M28C16-xxW
LOW POWER CONSUMPTION
FAST WRITE CYCLE
– 32 Bytes Page Write Operation
– Byte or Page Write Cycle: 5ms
ENHANCED END OF WRITE DETECTION
– Ready/Busy Open Drain Output
– Data Polling
– Toggle Bit
PAGE LOAD TIMER STATUS BIT
HIGH RELIABILITY SINGLE POLYSILICON,
CMOS TECHNOLOGY
– Endurance >100,000 Erase/Write Cycles
– Data Retention >40 Years
JEDEC APPROVED BYTEWIDE PIN OUT
DESCRIPTION
The M28C16A and M28C17Aare 2K x8 low power
Parallel EEPROM fabricatedwith STMicroelectron-
ics proprietarysingle polysilicon CMOS technology.
The device offers fast access time with low power
dissipation and requires a 5V or 3V power supply.
Table 1. Signal Names
A0-A10
DQ0-DQ7
W
E
G
RB
V
CC
V
SS
Address Input
Data Input / Output
Write Enable
Chip Enable
Output Enable
Ready / Busy
Supply Voltage
Ground
28
1
PDIP28 (BS)
PLCC32 (KA)
28
1
SO28 (MS)
300 mils
TSOP28 (NS)
8 x13.4mm
Figure 1. Logic Diagram
VCC
11
A0-A10
8
DQ0-DQ7
W
E
M28C16A
M28C17A
RB
G
VSS
AI02109
August 1998
1/19
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