MSD50
Glass Passivated Three
Phase Rectifier Bridge
V
RRM
800 to 1800V
I
D
50 Amp
Applications
Three phase rectifiers for power supplies
Rectifiers for DC motor field supplies
Battery charger rectifiers
Input rectifiers for variable frequency drives
Circuit
3
Features
Three phase bridge rectifier
Blocking voltage:800 to 1800V
Heat transfer through aluminum oxide DCB
ceramic isolated metal baseplate
Glass passivated chip
MSD
1
7
2
4
Module Type
TYPE
MSD50-08
MSD50-12
MSD50-16
MSD50-18
V
RRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
ID
IFSM
it
Visol
Tvj
Tstg
Ms
Weight
2
Conditions
Tc=85℃
t=10mS Tvj =45℃
t=10mS Tvj =45℃
a.c.50Hz;r.m.s.;1min
Values
50
420
880
3000
-40 to 150
-40 to 125
Units
A
A
A
2
s
V
℃
℃
Nm
g
To heatsink(M5)
Module
3±5%
78
Thermal Characteristics
Symbol
Conditions
Rth(j-c)
Rth(c-s)
Per diode
Module
Values
1.5
0.2
Units
℃/W
℃/W
Electrical Characteristics
Symbol
VFM
IRD
Conditions
T=25℃ IFM =100A
Tvj =25℃ VRD=VRRM
Tvj =150℃ VRD=VRRM
Values
1.5
≤0.2
≤3
Units
V
mA
mA
www.microsemi.com
MSD50 – Rev 0
Dec, 2009
1/4
MSD50
Performance Curves
200
A
150
120
W
Typ.
100
125
℃
50
IF
0
0
VF
0.5
1.0
25
℃
60
P
vtot
0
1.5
2.0 V
0 I
D
25
50 A
Fig1. Forward Characteristics
2.0
℃/
W
Z
th(j-
C
)
1.5
400
1.0
200
0.5
600
A
Fig2. Power dissipation
50HZ
0
0
0.001
0.01
0.1
1
10
100 S
1
10
cycles 100
Fig3. Transient thermal impedance
100
A
80
Fig4. Max Non-Repetitive Forward Surge
Current
60
40
20
I
D
0
0
Tc
50
100
150
℃
Fig5.Forward Current Derating Curve
MSD50 – Rev 0
Dec, 2009
www.microsemi.com
2/4