HS-508ARH-T
Data Sheet
July 1999
File Number
4605.1
Radiation Hardened 8 Channel CMOS
Analog Multiplexer with Overvoltage
Protection
Intersil‘s Satellite Applications Flow
TM
(SAF) devices are
fully tested and guaranteed to 100kRAD total dose. This
QML Class T device is processed to a standard flow
intended to meet the cost and shorter lead-time needs of
large volume satellite manufacturers, while maintaining a
high level of reliability.
The HS-508ARH-T is a dielectrically isolated, radiation
hardened, CMOS analog multiplexer incorporating an
important feature; it withstands analog input voltages much
greater than the supplies. This is essential in any system
where the analog inputs originate outside the equipment.
They can withstand a continuous input up to 10V greater
than either supply, which eliminates the possibility of
damage when supplies are off, but input signals are present.
Equally important, it can withstand brief input transient
spikes of several hundred volts; which otherwise would
require complex external protection networks. Necessarily,
ON resistance is somewhat higher than similar unprotected
devices, but very low leakage current combine to produce
low errors. Reference Application Notes 520 and 521,
available from the Semiconductor Products Division of
Intersil, for further information on the HS-508ARH-T
multiplexer in general.
Features
• QML Class T, Per MIL-PRF-38535
• Radiation Performance
- Gamma Dose (γ) 1 x 10
5
RAD(Si)
- No Latch-Up, Dielectrically Isolated Device Islands
- SEP LET > 110MeV/mg/cm
2
• Analog/Digital Overvoltage Protection
• Fail Safe with Power Loss (No Latchup)
• Break-Before-Make Switching
• DTL/TTL and CMOS Compatible
• Analog Signal Range
±15V
• Fast Access Time
• Supply Current at 1MHz Address Toggle (Typ) 4mA
• Standby Power (Typ.) 7.5mW
Pinouts
HS1-508ARH-T (SBDIP), CDIP2-T16
TOP VIEW
AO
EN
V-
IN 1
IN 2
1
2
3
4
5
6
7
8
16 A1
15 A2
14 GND
13 V+
12 IN 5
11 IN 6
10 IN 7
9 IN 8
Specifications
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HS-508ARH-T
are contained in SMD 5962-96742.
A “hot-link” is provided
from our website for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Intersil‘s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
www.intersil.com/quality/manuals.asp
IN 3
IN 4
OUT
HS9-508ARH-T (FLATPACK), CDFP4-F16
TOP VIEW
A0
EN
V-
IN1
IN2
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
A1
A2
GND
V+
IN5
IN6
IN7
IN8
Ordering Information
ORDERING
NUMBER
5962R9674201TEC
5962R9674201TXC
PART
NUMBER
HS1-508ARH-T
HS9-508ARH-T
TEMP.
RANGE
(
o
C)
-55 to 125
-55 to 125
IN3
IN4
OUT
NOTE:
Minimum order quantity for -T is 150 units through
distribution, or 450 units direct.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.
HS-508ARH-T
Die Characteristics
DIE DIMENSIONS:
(2108µm x 2743µm x 279µm
±25.4µm)
83 x 108 x 11mils
±1mil
METALLIZATION:
Type: Al Si
Thickness: 12.5k
Å
±2k
Å
SUBSTRATE POTENTIAL:
Unbiased (DI)
BACKSIDE FINISH:
Silicon
PASSIVATION:
Type: Silox (S
i
O
2
)
Thickness: 8.0k
Å
±1.0k
Å
WORST CASE CURRENT DENSITY:
6.68e4 A/cm
2
TRANSISTOR COUNT:
253
PROCESS:
CMOS-DI
Metallization Mask Layout
HS-508ARH-T
IN2
IN1
V-
IN3
IN4
EN
OUT
A0
A1
IN8
IN7
A2
IN6
IN5
V+
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
3
GND
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