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GBJ1510

Description
3.2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size48KB,2 Pages
ManufacturerETC
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GBJ1510 Overview

3.2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

GBJ15005 thru GBJ1510
Single Phase Bridge Rectifiers
Dimensions GBJ(RS6M)
GBJ15005
GBJ1501
GBJ1502
GBJ1504
GBJ1506
GBJ1508
GBJ1510
V
RRM
V
50
100
200
400
600
800
1000
V
RMS
V
35
70
140
280
420
560
700
V
DC
V
50
100
200
400
600
800
1000
Symbol
I
(AV)
I
FSM
V
F
I
R
I
2
t
C
J
R
OJC
T
J
T
STG
Characteristics
Maximum Average Forward (With Heatsink Note 2)
Rectified Current @T
C
=100
o
C (Without Heatsink)
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Maximum Forward Voltage At 7.5A DC
Maximum DC Reverse Current
At Rated DC Blocking Voltage
I
2
t Rating For Fusing (t < 8.3 ms)
Typical Junction Capacitance Per Element (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
@T
J
=25
o
C
@T
J
=125
o
C
Maximum Ratings
15.0
3.2
240
1.05
10
500
240
60
0.8
-55 to +150
-55 to +150
Unit
A
A
V
uA
A
2
S
pF
o
C/W
o
o
C
C
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Device Mounted On 300mm x 300mm x 1.6mm Cu Plate Heatsink.
FEATURES
* Rating to 1000V PRV
* Ideal for printed circuit board
* Low forward voltage drop, high current capability
* Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
MECHANICAL DATA
* Polarity: Symbols molded on body
* Weight: 0.23 ounces, 6.6 grams
* Mounting position: Any

GBJ1510 Related Products

GBJ1510 GBJ15005 GBJ1502 GBJ1504 GBJ1508 GBJ1501 GBJ1506
Description 3.2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 15 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
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