5962-8868104XX datasheet, PDF - EEWORLD Datasheet

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5962-8868104XX: DescriptionStandard SRAM, 64KX4, 70ns, CMOS, CQCC28, CERAMIC, LCC-28; Categorystorage storage; File Size141KB，17 Pages; ManufacturerEDI [Electronic devices inc.]

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5962-8868104XX Overview

Standard SRAM, 64KX4, 70ns, CMOS, CQCC28, CERAMIC, LCC-28

5962-8868104XX Parametric

Parameter Name	Attribute value
package instruction	CERAMIC, LCC-28
Reach Compliance Code	unknown
Maximum access time	70 ns
JESD-30 code	R-CQCC-N28
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	4
Number of functions	1
Number of terminals	28
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	64KX4
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QCCN
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	NO LEAD
Terminal location	QUAD
Base Number Matches	1

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REVISIONS

LTR

DESCRIPTION

Added vendor CAGE number 6Y440 and 65786 to the drawing as

approved sources of supply. Removed vendor CAGE number 0BK02

from the drawing. Also deleted ESDS from the drawing. Editorial

changes throughout.

Changes in accordance with NOR 5962-R349-92.

Added device types 05 and 06. Updated drawing to include new

verbage from standard boilerplate. Figure 1 Terminal connections, for

case outline Y, changed DQ to I/O,

, and

Removed CAGE numbers 61772, 6Y440, and 66301. Added CAGE

numbers 0EU86. ksr

Boilerplate update, part of 5 year review. ksr

07-11-02

Robert M. Heber

DATE (YR-MO-DA)

89-09-28

APPROVED

M. A. Frye

92-10-29

97-08-19

M. A. Frye

Ray Monnin

REV

SHEET

REV

SHEET

REV STATUS

OF SHEETS

PMIC N/A

REV

SHEET

PREPARED BY

Kenneth S. Rice

CHECKED BY

Charles Reusing

STANDARD

MICROCIRCUIT

DRAWING

THIS DRAWING IS AVAILABLE

FOR USE BY ALL

DEPARTMENTS

AND AGENCIES OF THE

DEPARTMENT OF DEFENSE

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43218-3990

http://www.dscc.dla.mil

APPROVED BY

DA DiCenzio

DRAWING APPROVAL DATE

88-07-27

AMSC N/A

MICROCIRCUIT, MEMORY, DIGITAL,

CMOS, 64K X 4 STATIC RANDOM

ACCESS MEMORY (SRAM),

MONOLITHIC SILICON

SIZE

SHEET

CAGE CODE

REVISION LEVEL

67268

1 OF

5962-88681

5962-E601-07

DSCC FORM 2233

APR 97

2. APPLICABLE DOCUMENTS

2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part

of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the

solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATION

MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-883 -

MIL-STD-1835 -

Test Method Standard Microcircuits.

Interface Standard Electronic Component Case Outlines.

DEPARTMENT OF DEFENSE HANDBOOKS

MIL-HDBK-103 -

MIL-HDBK-780 -

List of Standard Microcircuit Drawings.

Standard Microcircuit Drawings.

(Copies of these documents are available online at

http://assist.daps.dla.mil/quicksearch/

http://assist.daps.dla.mil

or from

the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of

this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific

exemption has been obtained.

3. REQUIREMENTS

3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-

JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer

Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-

38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity

approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make

modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These

modifications shall not affect the PIN as described herein. A "Q" or "QML" certification mark in accordance with MIL-PRF-38535

is required to identify when the QML flow option is used.

3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified

in MIL-PRF-38535, appendix A and herein.

3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.2 herein.

3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.

3.2.3 Truth table(s). The truth table(s) shall be as specified on figure 2.

3.2.4 Die overcoat. Polyimide and silicone coatings are allowable as an overcoat on the die for alpha particle protection only.

Each coated microcircuit inspection lot (see inspection lot as defined in MIL-PRF-38535) shall be subjected to and pass the

internal moisture content test at 5000 ppm (see method 1018 of MIL-STD-883). The frequency of the internal water vapor testing

shall not be decreased unless approved by the preparing activity for class M. The TRB will ascertain the requirements as

provided by MIL-PRF-38535 for classes Q and V. Samples may be pulled any time after seal.

3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are

as specified in table I and shall apply over the full case operating temperature range.

3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical

tests for each subgroup are described in table I.

STANDARD

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43218-3990

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-88681

SHEET

5962-8868104XX Related Products

	5962-8868104XX	5962-8868103XX	5962-8868101XX	5962-8868103LX	5962-8868101LX	5962-8868102XX	5962-8868104LX	5962-8868102LX
Description	Standard SRAM, 64KX4, 70ns, CMOS, CQCC28, CERAMIC, LCC-28	Standard SRAM, 64KX4, 55ns, CMOS, CQCC28, CERAMIC, LCC-28	Standard SRAM, 64KX4, 35ns, CMOS, CQCC28, CERAMIC, LCC-28	Standard SRAM, 64KX4, 55ns, CMOS, CDIP24,	Standard SRAM, 64KX4, 35ns, CMOS, CDIP24,	Standard SRAM, 64KX4, 45ns, CMOS, CQCC28, CERAMIC, LCC-28	Standard SRAM, 64KX4, 70ns, CMOS, CDIP24,	Standard SRAM, 64KX4, 45ns, CMOS, CDIP24,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	70 ns	55 ns	35 ns	55 ns	35 ns	45 ns	70 ns	45 ns
JESD-30 code	R-CQCC-N28	R-CQCC-N28	R-CQCC-N28	R-GDIP-T24	R-GDIP-T24	R-CQCC-N28	R-CDIP-T24	R-GDIP-T24
memory density	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	4	4	4	4	4	4	4	4
Number of functions	1	1	1	1	1	1	1	1
Number of terminals	28	28	28	24	24	28	24	24
word count	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words
character code	64000	64000	64000	64000	64000	64000	64000	64000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	64KX4	64KX4	64KX4	64KX4	64KX4	64KX4	64KX4	64KX4
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	IN-LINE	IN-LINE	CHIP CARRIER	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	NO	NO	YES	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal form	NO LEAD	NO LEAD	NO LEAD	THROUGH-HOLE	THROUGH-HOLE	NO LEAD	THROUGH-HOLE	THROUGH-HOLE
Terminal location	QUAD	QUAD	QUAD	DUAL	DUAL	QUAD	DUAL	DUAL
encapsulated code	QCCN	QCCN	QCCN	-	-	QCCN	DIP	-
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	-	-	5.5 V	5.5 V	-
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	-	-	4.5 V	4.5 V	-
Base Number Matches	1	1	1	1	1	1	1	-

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