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GS1D

Description
1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size43KB,2 Pages
ManufacturerETC
Download Datasheet Compare View All

GS1D Overview

1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC

RS
GS1A THRU GS1M
SURFACE MOUNT STANDARD RECOVERY RECTIFIER
VOLTAGE - 50 TO 1000 VOLTS CURRENT - 1.0 AMPERE
FEATURES
For surface mount applications
Glass passivated junction
Low profile package
Built-in strain relief
Easy pick and place
Low forward voltage drop
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
High temperature soldering:
250
o
C/10 seconds at terminals
B
C
A
D
J
H
G
E
SMA / DO-214AC
Dim Min Max
A
2.29 2.92
B
4.00 4.60
1.25 1.65
C
0.152 0.305
D
4.80 5.59
E
0.051 0.203
G
0.76 1.52
H
2.00 2.62
J
All Dimensions in mm
MECHANICAL DATA
Case: JEDEC DO-214AC molded plastic
Terminals: Solder plated, solderable per
MIL-STD-202, method 208
Polarity: Color band denotes cathode end
Standard Package: 12mm tape (EIA STD EIA-481)
Weight: 0.002 ounce, 0.064 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
Single phase half wave 60 H
z
, resistive or inductive load
For capacitive load, derate current by 20%
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
L
= 100
o
C
Peak Forward Surge Current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
T
A
= 25 C
T
A
= 125 C
o
o
SYMBOL GS1A GS1B GS1D GS1G GS1J GS1K GS1M UNITS
50
100 200 400 600
V
RRM
800 1000
Volts
35
70
140 280 420
V
RMS
560 700
Volts
50
100 200 400 600
800 1000
Volts
V
DC
I
(AV)
1.0
Amps
I
FSM
V
F
I
R
C
J
R
R
JA
JL
30
1.1
5
50
12
75
30
-55 to +150
Amps
Volts
A
pF
o
Typical Junction Capacitance
(NOTE 1)
Maximum Thermal Resistance
(NOTE 2)
Operating and Storage Temperature Range
C/W
o
T
J
, T
STG
C
NOTES:
1. Measured at 1.0 MH
z
and applied reverse voltage of 4.0 volts
2. P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas

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GS1D GS1A-GS1M GS1B GS1A GS1G GS1K GS1J GS1M
Description 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC
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