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HSC1959

Description
NPN EPITAXIAL PLANAR TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size38KB,4 Pages
ManufacturerHSMC
Websitehttp://www.hsmc.com.tw/
Download Datasheet Parametric Compare View All

HSC1959 Overview

NPN EPITAXIAL PLANAR TRANSISTOR

HSC1959 Parametric

Parameter NameAttribute value
MakerHSMC
Reach Compliance Codeunknow
Maximum collector current (IC)0.5 A
ConfigurationSingle
Minimum DC current gain (hFE)40
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.5 W
surface mountNO
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6415
Issued Date : 1992.11.25
Revised Date : 2002.02.05
Page No. : 1/4
HBC337
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HBC337 is designed for driver and output-stage of audio
amplifiers.
Features
High DC Current Gain: 100-600 at IC=100mA,VCE=1V
Complementary to HBC327
TO-92
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 50 V
VCEO Collector to Emitter Voltage ...................................................................................... 45 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current ....................................................................................................... 800 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
50
45
5
-
-
-
100
40
-
-
Typ.
-
-
-
-
-
-
-
-
210
4
Max.
-
-
-
100
0.7
1.2
600
-
-
-
Unit
V
V
V
nA
V
V
Test Conditions
IC=100uA, IE=0
IC=10mA, IB=0
IE=10uA, IC=0
VCB=45V, IE=0
IB=500mA, IB=50mA
IC=300mA, VCE=1V
VCE=1V, IC=100mA
VCE=1V, IC=300mA
VCE=5V, IC=10mA, f=100MHZ
VCB=10V, IE=0, f=1MHZ
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHZ
pF
Classification of hFE1
Rank
Range
16
100-250
25
160-400
40
250-600
HBC337
HSMC Product Specification

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