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LL4005G

Description
1 A, 600 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size49KB,2 Pages
ManufacturerETC
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LL4005G Overview

1 A, 600 V, SILICON, SIGNAL DIODE

LL4005G Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC, MELF-2
stateACTIVE
packaging shapeROUND
Package SizeLONG FORM
surface mountYes
Terminal formWRAP AROUND
Terminal locationEND
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionISOLATED
Diode component materialsSILICON
Diode typeSIGNAL DIODE
Maximum repetitive peak reverse voltage600 V
Maximum average forward current1 A
LL4001G
THRU
LL4007G
1.0 AMP Surface Mount Glass Passivated Silicon Rectifiers
Voltage Range
50 to 1000 Volts
Current
1.0 Ampere
Features
a
a
a
a
a
Plastic package has carries underwriters
Laboratory flammability classification 94V-0
Surge overload rating to 30 Ampers peak
Ideal for printed circuit board.
Reliable low cost construction utilizing
molded plastic technique results in in-
expensive product.
High temperature soldering guaranteed:
250°C / 10 seconds at terminals.
MELF
Mechanical Data
a
a
a
Solderability per MIL-STD-750, method 208
at terminals.
Mounting position: Any
Weight: 0.12 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
LL
LL
LL
LL
LL
LL
LL
Units
Type Number
4001G 4002G 4003G 4004G 4005G 4006G 4007G
M
aximum
Recurrent P
eak
R
everse
V
oltage
50
100 200 400 600 800 1000 V
Maximum RMS Voltage
35
70
140 280 420 560 700
V
Maximum DC Blocking Voltage
50
100 200 400 600 800 1000 V
Maximum Average Forward Rectified Current
@T
A
= 75°C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@1.0A
Maximum DC Reverse Current @ T
A
=25°C
at Rated DC Blocking Voltage @ T
A
=125°C
Typical Junction Capacitance ( Note 1 )
Typical Thermal Resistance RÛJC (Note 2)
Operating and Storage Temperature Range
T
J
,T
STG
1.0
30
1.1
5
100
15
50
- 65 to + 150
A
A
V
uA
uA
pF
°C/W
°C
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
Notes:
2. Thermal Resistance from Junction to Ambient.
- 374 -

LL4005G Related Products

LL4005G LL4007G LL4006G LL4004G LL4003G LL4002G LL4001G
Description 1 A, 600 V, SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE
state ACTIVE CONSULT MFR - ACTIVE ACTIVE - ACTIVE
Diode type SIGNAL DIODE Signal diode - Signal diode Signal diode - SIGNAL DIODE

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