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LL4004G

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size49KB,2 Pages
ManufacturerETC
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LL4004G Overview

SIGNAL DIODE

LL4004G Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSignal diode
LL4001G
THRU
LL4007G
1.0 AMP Surface Mount Glass Passivated Silicon Rectifiers
Voltage Range
50 to 1000 Volts
Current
1.0 Ampere
Features
a
a
a
a
a
Plastic package has carries underwriters
Laboratory flammability classification 94V-0
Surge overload rating to 30 Ampers peak
Ideal for printed circuit board.
Reliable low cost construction utilizing
molded plastic technique results in in-
expensive product.
High temperature soldering guaranteed:
250°C / 10 seconds at terminals.
MELF
Mechanical Data
a
a
a
Solderability per MIL-STD-750, method 208
at terminals.
Mounting position: Any
Weight: 0.12 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
LL
LL
LL
LL
LL
LL
LL
Units
Type Number
4001G 4002G 4003G 4004G 4005G 4006G 4007G
M
aximum
Recurrent P
eak
R
everse
V
oltage
50
100 200 400 600 800 1000 V
Maximum RMS Voltage
35
70
140 280 420 560 700
V
Maximum DC Blocking Voltage
50
100 200 400 600 800 1000 V
Maximum Average Forward Rectified Current
@T
A
= 75°C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@1.0A
Maximum DC Reverse Current @ T
A
=25°C
at Rated DC Blocking Voltage @ T
A
=125°C
Typical Junction Capacitance ( Note 1 )
Typical Thermal Resistance RÛJC (Note 2)
Operating and Storage Temperature Range
T
J
,T
STG
1.0
30
1.1
5
100
15
50
- 65 to + 150
A
A
V
uA
uA
pF
°C/W
°C
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
Notes:
2. Thermal Resistance from Junction to Ambient.
- 374 -

LL4004G Related Products

LL4004G LL4005G LL4007G LL4006G LL4003G LL4002G LL4001G
Description SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE
state ACTIVE ACTIVE CONSULT MFR - ACTIVE - ACTIVE
Diode type Signal diode SIGNAL DIODE Signal diode - Signal diode - SIGNAL DIODE

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