specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS
(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
•
3.0 A, 200 V. R
DS(ON)
= 130 mΩ @ V
GS
= 10 V
•
Low gate charge
•
Fast switching speed
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
D
D
D
D
5
6
7
4
3
2
1
SO-8
S
S
S
G
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
200
±20
(Note 1a)
Units
V
V
A
W
3.0
20
2.5
1.2
1.0
3.2
−55
to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
dv/dt
T
J
, T
STG
Peak Diode Recovery dv/dt
(Note 3)
V/ns
°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
50
125
25
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS2670
Device
FDS2670
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2001
Fairchild Semiconductor Corporation
FDS2670 Rev C1(W)
FDS2670
Electrical Characteristics
Symbol
W
DSS
I
AR
T
A
= 25°C unless otherwise noted
Parameter
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
DD
= 100 V,
I
D
= 3.0 A
Min
Typ
Max Units
375
3.0
mJ
A
Drain-Source Avalanche Ratings
(Note 1)
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
I
D
= 250
µA
V
GS
= 0 V,
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 160 V,
V
GS
= 20 V,
V
GS
= –20 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
I
D
= 250
µA
200
214
1
100
–100
V
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
C
iss
C
oss
C
rss
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
2
4
–10
100
205
4.5
V
mV/°C
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 10 V,
I
D
= 3.0 A
V
GS
=10 V, I
D
=3.0 A, T
J
=125°C
V
GS
= 10 V,
V
DS
= 10 V
V
DS
= 10 V,
I
D
= 3.0 A
130
275
mΩ
A
20
15
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 100 V,
f = 1.0 MHz
V
GS
= 0 V,
1228
112
17
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= 100 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
13
8
30
25
23
16
48
40
43
ns
ns
ns
ns
nC
nC
nC
V
DS
= 100 V,
V
GS
= 10 V
I
D
= 3 A,
27
7
10
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
I
S
= 2.1 A
V
GS
= 0 V,
Voltage
2.1
(Note 2)
A
V
0.7
1.2
FDS2670 Rev C1(W)
FDS2670
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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