DPF30I300PA
HiPerFRED²
V
RRM
I
FAV
t
rr
=
=
=
300 V
30 A
55 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DPF30I300PA
Backside: cathode
3
1
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
Package:
TO-220
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101b
© 2013 IXYS all rights reserved
DPF30I300PA
Fast Diode
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current, drain current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 150 °C
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
0.72
7.4
0.85
0.50
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
= 150 V f = 1 MHz
I
F
=
30 A; V
R
= 200 V
T
VJ
= 45°C
T
VJ
= 25°C
T
VJ
= 25 °C
T
VJ
= 125°C
T
VJ
= 25 °C
T
VJ
= 125°C
-di
F
/dt = 200 A/µs
42
6
10
55
85
175
390
V
mΩ
K/W
K/W
W
A
pF
A
A
ns
ns
min.
typ.
max.
300
300
5
0.25
1.17
1.37
0.98
1.21
30
Unit
V
V
µA
mA
V
V
V
V
A
max. non-repetitive reverse blocking voltage
V
R
= 300 V
V
R
= 300 V
I
F
=
I
F
=
I
F
=
I
F
=
30 A
60 A
30 A
60 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
I
RM
t
rr
average forward current
T
C
= 145°C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
reverse recovery time
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101b
© 2013 IXYS all rights reserved
DPF30I300PA
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
F
C
mounting torque
mounting force with clip
TO-220
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-55
-55
-55
typ.
max.
35
175
150
150
Unit
A
°C
°C
°C
g
Nm
N
2
0.4
20
0.6
60
Product Marking
Part number
D
P
F
30
I
300
PA
=
=
=
=
=
=
=
Diode
HiPerFRED
ultra fast
Current Rating [A]
Single Diode
Reverse Voltage [V]
TO-220AC (2)
Part Number
Logo
Assembly Line
Lot #
Date Code
XXXXXX
Zyyww
abcdef
Ordering
Standard
Part Number
DPF30I300PA
Marking on Product
DPF30I300PA
Delivery Mode
Tube
Quantity
50
Code No.
511414
Similar Part
DPG30I300PA
DPG30I300HA
Package
TO-220AC (2)
TO-247AD (2)
Voltage class
300
300
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Fast
Diode
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
0.72
4.2
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101b
© 2013 IXYS all rights reserved
DPF30I300PA
Outlines TO-220
A
Q
E
ØP
A1
Dim.
A
A1
A2
b
b2
C
D
E
e
H1
L
L1
Millimeter
Min.
Max.
4.32
1.14
2.29
0.64
1.15
0.35
14.73
9.91
5.08
5.85
12.70
2.79
3.54
2.54
4.82
1.39
2.79
1.01
1.65
0.56
16.00
10.66
BSC
6.85
13.97
5.84
4.08
3.18
Inches
Min.
Max.
0.170
0.045
0.090
0.025
0.045
0.014
0.580
0.390
0.200
0.230
0.500
0.110
0.139
0.100
0.190
0.055
0.110
0.040
0.065
0.022
0.630
0.420
BSC
0.270
0.550
0.230
0.161
0.125
4
1
3
2x b2
L1
2x b
e
L
D
H1
C
A2
ØP
Q
3
1
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101b
© 2013 IXYS all rights reserved
DPF30I300PA
Fast Diode
1.2
80
1.0
0.8
I
F
= 60 A
30 A
15 A
24
20
16
I
F
= 60 A
30 A
15 A
60
I
F
40
Q
rr
0.6
I
RM
12
[A]
T
VJ
= 150°C
20
25°C
0
0.0
[μC]
0.4
0.2
0.0
0.4
0.8
1.2
1.6
2.0
0
200
400
600
T
VJ
= 125°C
V
R
= 200 V
[A]
8
4
0
0
200
400
600
T
VJ
= 125°C
V
R
= 200 V
V
F
[V]
Fig. 1 Forward current
I
F
versus V
F
-di
F
/dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Q
rr
versus -di
F
/dt
120
110
100
90
1000
-di
F
/dt [A/μs]
Fig. 3 Typ. reverse recovery current
I
RM
versus -di
F
/dt
1.4
1.2
1.0
0.8
T
VJ
= 125°C
V
R
= 200 V
10
t
fr
V
FR
8
800
K
f
0.6
0.4
0.2
0.0
0
40
80
120
160
Q
rr
I
RM
t
rr
80
t
fr
600
[ns]
400
I
F
= 60 A
30 A
15 A
T
VJ
= 125°C
V
R
= 200 V
I
F
= 30 A
0
200
400
6
V
FR
[ns]
70
60
50
40
0
4
[V]
200
2
0
200
400
600
0
600
T
VJ
[°C]
Fig. 4 Typ. dynamic parameters
Q
rr
, I
RM
versus T
VJ
40
1.0
-di
F
/dt [A/μs]
Fig. 5 Typ. reverse recovery time
t
rr
versus -di
F
/dt
-di
F
/dt [A/μs]
Fig. 6 Typ. forward recov. voltage V
FR
& recovery time t
fr
vs. di
F
/dt
0.8
30
I
F
= 60 A
30 A
15 A
E
rec
20
0.6
Z
thJC
0.4
[μJ]
10
T
VJ
= 125°C
V
R
= 200 V
0
0
200
400
600
[K/W]
0.2
0.0
10
-3
10
-2
10
-1
10
0
10
1
-di
F
/dt [A/μs]
Fig. 7 Typ. recovery energy
E
rec
versus -di
F
/dt
IXYS reserves the right to change limits, conditions and dimensions.
t [s]
Fig. 8 Transient thermal impedance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101b
© 2013 IXYS all rights reserved
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