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HT772

Description
PNP EPITAXIAL PLANAR TRANSISTOR
File Size47KB,4 Pages
ManufacturerHSMC
Websitehttp://www.hsmc.com.tw/
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HT772 Overview

PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200209
Issued Date : 1993.05.15
Revised Date : 2002.05.08
Page No. : 1/4
HT772
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HT772 is designed for using in output stage of 1w audio amplifier,
voltage regulator, DC-DC converter and relay driver.
Absolute Maximum Ratings
(Ta=25°C)
TO-126
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ....................................................................................... 1 W
Total Power Dissipation (Tc=25°C) ..................................................................................... 10 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -40 V
BVCEO Collector to Emitter Voltage................................................................................... -30 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current (DC) ..................................................................................................... -3 A
IC Collector Current (Pulse) ................................................................................................. -7 A
IB Base Current (DC) ........................................................................................................ -0.6 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
-40
-30
-5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-0.3
-1
-
200
80
55
Max.
-
-
-
-1
-1
-0.5
-2
-
400
-
-
Unit
V
V
V
uA
uA
V
V
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-30V
VEB=-3V
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
IC=-20mA, VCE=-2V
IC=-1A, VCE=-2V
IC=-0.1A, VCE=-5V
VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
Classification Of hFE2
Rank
Range
Q
100-200
P
160-320
E
200-400
HT772
HSMC Product Specification
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