VISHAY
BAT54-HT3 to BAT54S-HT3
Vishay Semiconductors
Schottky Diodes
Features
• These diodes feature very low turn-on voltage and
fast switching.
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges.
• Space saving LLP package
Top view
Pin 1
BAT54-HT3
3
BAT54A-HT3
3
Mechanical Data
Case:LLP75-3B
Plastic Package
Molding Compound Flammability Rating:
UL 94 V-0
Terminals:
High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Weight:
5 mg
17004
Top View
1
2
1
2
BAT54C-HT3
3
BAT54S-HT3
3
Top View
1
2
1
2
Parts Table
Part
BAT54-HT3
BAT54A-HT3
BAT54C-HT3
BAT54S-HT3
Ordering code
BAT54-HT3-GS08
BAT54A-HT3-GS08
BAT54C-HT3-GS08
BAT54S-HT3-GS08
L4
L5
L6
L7
Marking
Remarks
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse
voltage=Working peak reverse
voltage
Forward continuous current
Repetitive peak forward current
Surge forward current current
Power dissipation
Test condition
Symbol
V
RRM
Value
30
Unit
V
I
F
I
FRM
I
FSM
P
tot
200
300
600
230
mA
mA
mA
mW
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambiant air
Junction temperature
Storage temperature range
Test condition
Symbol
R
θJA
T
j
T
S
Value
430
125
- 65 to + 150
Unit
°C/W
°C
°C
Document Number 85690
Rev. 5, 11-Sep-03
www.vishay.com
1
BAT54-HT3 to BAT54S-HT3
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse Breakdown voltage
Leakage current
Forward voltage
Test condition
100
µA
pulses
Pulse test t
p
< 300
µs, θ
< 2 % at
V
R
= 25 V
I
F
= 0.1 mA, t
p
< 300
µs, θ
< 2 %
I
F
= 1 mA, t
p
< 300
µs, θ
< 2 %
I
F
= 10 mA, t
p
< 300
µs, θ
< 2 %
I
F
= 30 mA, t
p
< 300
µs, θ
< 2 %
I
F
= 100 mA, t
p
< 300
µs, θ
< 2 %
Capacitance
Reverse recovery time
V
R
= 0 V, f = 1 MHz
I
F
= 10 mA , I
R
= 10 mA to
I
R
= 1 mA, R
L
= 100
Ω
V
F
V
F
V
F
V
F
V
F
C
tot
t
rr
Symbol
V
(BR)
Min
30
2
240
320
400
500
1000
12
5
Typ.
Max
VISHAY
Unit
V
µA
mV
mV
mV
mV
mV
pF
ns
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
1000
14
12
100
T
J
= 125 C
10
I
F
in mA
10
T
J
= -40 C
1
T
J
= 25 C
C
in
pF
8
6
4
0.1
2
0.01
0
gbat54-ht3_01
0.2 0.4 0.6 0.8 1.0 1.2 1.4
0
0
gbat54-ht3_03
V
F
in V
4
8
12
16
20
24
28
V
R
in V
Figure 1. Typical Forward Voltage Forward Current at Various
Temperatures
Figure 3. Typical Capacitance °C vs. Reverse Applied Voltage V
R
1000
100
T
J
= 125 C
T
J
= 100 C
10
I
R
in
µA
T
J
= 75 C
1
T
J
= 50 C
0.1
T
J
= 25 C
0.01
0
gbat45-ht3 02
5
10
15
20
25
30
V
R
in V
Figure 2. Typical Variation of Reverse Current at Various
Temperatures
www.vishay.com
2
Document Number 85690
Rev. 5, 11-Sep-03
BAT54-HT3 to BAT54S-HT3
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 85690
Rev. 5, 11-Sep-03
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