4N25-X000/4N26-X000/4N27-X000/4N28-X000
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection
FEATURES
• Isolation test voltage 5300 V
RMS
A
C
NC
i179004
1
2
3
6 B
5 C
4 E
• Interfaces with common logic families
• Input-output coupling capacitance < 0.5 pF
• Industry standard dual-in-line 6-pin package
• Lead (Pb)-free component
• Component in accordance to
2002/95/EC and WEEE 2002/96/EC
RoHS
DESCRIPTION
The 4N25 family is an Industry Standard Single Channel
Phototransistor Coupler. This family includes the
4N25/4N26/4N27/4N28. Each optocoupler consists of
gallium arsenide infrared LED and a silicon NPN
phototransistor.
These couplers are Underwriters Laboratories (UL) listed to
comply with a 5300 V
RMS
isolation test voltage. This isolation
performance is accomplished through special Vishay
manufacturing process.
Compliance to DIN EN 60747-5-2 (VDE 0884)/
DIN EN 60747-5-5 pending partial discharge isolation
specification is available by ordering option 1.
These isolation processes and the Vishay ISO9001 quality
program results in the highest isolation performance
available for a commercial plastic phototransistor
optocoupler.
The devices are also available in lead formed configuration
suitable for surface mounting and are available either on
tape and reel, or in standard tube shipping containers.
Note
For additional design information see application note 45 normalized curves
APPLICATIONS
• AC mains detection
• Reed relay driving
• Switch mode power supply feedback
• Telephone ring detection
• Logic ground isolation
• Logic coupling with high frequency noise rejection
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-2 (VDE 0884)
DIN EN 60747-5-5 pending
available with option 1
ORDER INFORMATION
PART
4N25-X000
4N26-X000
4N27-X000
4N28-X000
4N25-X006
4N25-X007
4N25-X009
4N26-X006
4N26-X007
4N26-X009
4N27-X007
4N27-X009
4N28-X009
Note
For additional information on the available options refer to option information.
REMARKS
CTR > 20 %, DIP-6
CTR > 20 %, DIP-6
CTR > 10 %, DIP-6
CTR > 10 %, DIP-6
CTR > 20 %, DIP-6 400 mil (option 6)
CTR > 20 %, SMD-6 (option 7)
CTR > 20 %, SMD-6 (option 9)
CTR > 20 %, DIP-6 400 mil (option 6)
CTR > 20 %, SMD-6 (option 7)
CTR > 20 %, SMD-6 (option 9)
CTR > 10 %, SMD-6 (option 7)
CTR > 10 %, SMD-6 (option 9)
CTR > 10 %, SMD-6 (option 9)
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1
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 81864
Rev. 1.0, 11-Mar-08
4N25-X000/4N26-X000/4N27-X000/4N28-X000
Optocoupler, Phototransistor Output,
with Base Connection
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
Forward current
Surge current
Power dissipation
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector current
Power dissipation
COUPLER
Isolation test voltage
Creepage
Clearance
Isolation thickness between emitter and
detector
Comparative tracking index
Isolation resistance
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
(2)
max.10 s dip soldering:
distance to seating plane
≥
1.5 mm
DIN IEC 112/VDE0303, part 1
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
T
stg
T
amb
T
j
T
sld
V
ISO
5300
≥
7.0
≥
7.0
≥
0.4
175
10
12
10
11
- 55 to + 150
- 55 to + 100
100
260
Ω
Ω
°C
°C
°C
°C
V
RMS
mm
mm
mm
t
≤
1.0 ms
V
CEO
V
EBO
I
C
I
C
P
diss
70
7
50
100
150
V
V
mA
mA
mW
t
≤
10 µs
V
R
I
F
I
FSM
P
diss
6
60
2.5
100
V
mA
A
mW
(1)
Vishay Semiconductors
TEST CONDITION
SYMBOL
VALUE
UNIT
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to wave profile for soldering conditions for through hole devices.
ELECTRICAL CHARACTERISTICS
(1)
PARAMETER
INPUT
Forward voltage
(2)
Reverse current
Capacitance
OUTPUT
Collector base breakdown voltage
(2)
Collector emitter breakdown voltage
(2)
Emitter collector breakdown voltage
(2)
I
C
= 100 µA
I
C
= 1.0 mA
I
E
= 100 µA
4N25
I
CEO
(dark)
(2)
V
CE
= 10 V, (base open)
4N26
4N27
4N28
I
CBO
(dark)
(2)
Collector emitter capacitance
Document Number: 81864
Rev. 1.0, 11-Mar-08
V
CB
= 10 V,
(emitter open)
V
CE
= 0
C
CE
BV
CBO
BV
CEO
BV
ECO
70
30
7
5
5
5
10
2.0
6.0
50
50
50
100
20
V
V
V
nA
nA
nA
nA
nA
pF
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2
(2)
TEST CONDITION
I
F
= 50 mA
V
R
= 3.0 V
V
R
= 0 V
PART
SYMBOL
V
F
I
R
C
O
MIN.
TYP.
1.3
0.1
25
MAX.
1.5
100
UNIT
V
µA
pF
For technical questions, contact: optocoupler.answers@vishay.com
4N25-X000/4N26-X000/4N27-X000/4N28-X000
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection
ELECTRICAL CHARACTERISTICS
(1)
PARAMETER
COUPLER
Isolation test voltage
(2)
Saturation voltage, collector emitter
Resistance, input output
(2)
Capacitance, input output
Peak, 60 Hz
I
CE
= 2.0 mA, I
F
= 50 mA
V
IO
= 500 V
f = 1 MHz
V
IO
V
CE(sat)
R
IO
C
IO
100
0.5
5300
0.5
V
V
GΩ
pF
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(2)
JEDEC registered values are 2500 V, 1500 V, 1500 V and 500 V for the 4N25, 4N26, 4N27 and 4N28 respectively.
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
4N25
DC current transfer ratio
V
CE
= 10 V, I
F
= 10 mA
4N26
4N27
4N28
Note
Indicates JEDEC registered values.
SYMBOL
CTR
DC
CTR
DC
CTR
DC
CTR
DC
MIN.
20
20
10
10
TYP.
50
50
30
30
MAX.
UNIT
%
%
%
%
SWITCHING CHARACTERISTICS
PARAMETER
Rise and fall times
TEST CONDITION
V
CE
= 10 V, I
F
= 10 mA, R
L
= 100
Ω
SYMBOL
t
r
, t
f
MIN.
TYP.
2.0
MAX.
UNIT
µs
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
1.4
T
A
= - 55 °C
T
A
= 25 °C
1.5
1.2
1.1
1.0
0.9
0.8
0.7
0.1
1
10
100
T
A
=
85
°C
NCTR
-
Normalized
CTR
V
F
-Forward
Voltage
(V)
1.3
Normalized
to:
V
CE
= 10
V,
I
F
= 10 mA, T
A
= 25 °C
CTR
CE(sat)
= 0.4
V
T
A
= 25 °C
1.0
0.5
NCTR(SAT)
NCTR
0.0
0
1
10
100
i4n25_01
I
F
- Forward Current (mA)
i4n25_02
I
F
- LED Current (mA)
Fig. 1 - Forward Voltage vs. Forward Current
Fig. 2 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
www.vishay.com
3
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 81864
Rev. 1.0, 11-Mar-08
4N25-X000/4N26-X000/4N27-X000/4N28-X000
Optocoupler, Phototransistor Output,
with Base Connection
Vishay Semiconductors
1.5
I
CE
- Collector Current (mA)
NCTR
-
Normalized
CTR
Normalized
to:
V
CE
= 10
V,
I
F
= 10 mA, T
A
= 25 °C
CTR
CE(sat)
V
CE
= 0.4
V
1.0
T
A
= 50 °C
35
30
25
20
15
25 °C
10
5
0
85
°C
70 °C
50 °C
0.5
NCTR(SAT)
NCTR
0.0
0.1
1
10
100
0
i4n25_06
10
20
30
40
50
60
i4n25_03
I
F
- LED Current (mA)
I
F
- LED Current (mA)
Fig. 3 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
Fig. 6 - Collector Emitter Current vs.
Temperature and LED Current
1.5
I
CEO
- Collector Emitter (nA)
NCTR
-
Normalized
CTR
Normalized
to:
V
CE
= 10
V,
I
F
= 10 mA, T
A
= 25 °C
CTR
CE(sat)
V
CE
= 0.4
V
1.0
T
A
= 70 °C
10
5
10
4
10
3
10
2
V
CE
= 10
V
10
1
10
0
10
- 1
10
- 2
- 20
i4n25_07
0.5
NCTR(SAT)
NCTR
0.0
0.1
i4n25_04
Typical
1
10
100
0
20
40
60
80
100
I
F
- LED Current (mA)
T
amb
- Ambient Temperature (°C)
Fig. 4 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
Fig. 7 - Collector Emitter Leakage Current vs. Temperature
1.5
NCTRcb
-
Normalized
CTRcb
NCTR
-
Normalized
CTR
Normalized
to:
V
CE
= 10
V,
I
F
= 10 mA, T
A
= 25 °C
CTR
CE(sat)
V
CE
= 0.4
V
1.0
T
A
=
85
°C
1.5
Normalized
to:
V
CB
= 9.3
V,
I
F
= 10 mA, T
A
= 25 °C
1.0
0.5
NCTR(SAT)
NCTR
0.0
0.1
1
10
100
0.5
25 °C
50 °C
70 °C
0.0
0.1
1
10
100
i4n25_05
I
F
- LED Current (mA)
i4n25_08
I
F
- LED Current (mA)
Fig. 5 - Normalized Non-Saturated and Saturated CTR vs.
LED Current
Fig. 8 - Normalized CTRcb vs. LED Current and Temperature
Document Number: 81864
Rev. 1.0, 11-Mar-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
4
4N25-X000/4N26-X000/4N27-X000/4N28-X000
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection
10
1000
2.5
t
PLH
- Propagation Delay (µs)
Normalized
Photocurrent
Normalized
to:
I
F
= 10 mA, T
A
= 25 °C
1
t
PHL
100
2.0
1
0.
Nib,
T
A
= - 20 °C
Nib,
T
A
= 20 °C
Nib,
T
A
= 50 °C
Nib,
T
A
= 70 °C
0.01
0.1
1
10
100
10
t
PLH
1.5
1
0.1
i4n25_12
1
10
1.0
100
i4n25_09
I
F
- LED Current (mA)
R
L
- Collector Load Resistor (kΩ)
Fig. 9 - Normalized Photocurrent vs. I
F
and Temperature
Fig. 12 - Propagation Delay vs. Collector Load Resistor
1.2
70 °C
I
F
NHFE
-
Normalized
HFE
1.0
25 °C
- 20 °C
0.8
Normalized
to:
I
B
= 20
µA, V
CE
= 10
V,
T
A
= 25 °C
t
D
V
O
t
R
t
PLH
V
TH
= 1.5
V
t
PHL
t
S
t
F
0.6
0.4
1
i4n25_10
10
100
1000
Ib - Base Current (µA)
i4n25_13
Fig. 13 - Switching Timing
Fig. 10 - Normalized Non-Saturated h
FE
vs.
Base Current and Temperature
NHFE(sat)
-
Normalized
Saturated HFE
1.5
Normalized
to:
V
CE
= 10
V,
I
b
= 20
µA
T
A
= 25 °C
V
CC
= 5.0
V
F = 10 kHz
DF = 50
%
70 °C 50 °C
1.0
25 °C
- 20 °C
0.5
V
CE
= 0.4
V
0.0
1
i4n25_11
R
L
V
O
I
F
= 10 mA
i4n25_14
10
100
1000
Ib - Base Current (µA)
Fig. 14 - Switching Schematic
Fig. 11 - Normalized h
FE
vs. Base Current and Temperature
www.vishay.com
5
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 81864
Rev. 1.0, 11-Mar-08
t
PHL
- Propagation Delay (µs)
I
F
= 10 mA, T
A
= 25 °C
V
CC
= 5.0
V, V
th
= 1.5
V
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