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HUF75309P3

Description
19 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size213KB,10 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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HUF75309P3 Overview

19 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

HUF75309P3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)19 A
Maximum drain current (ID)19 A
Maximum drain-source on-resistance0.07 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)55 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
HUF75309P3, HUF75309D3, HUF75309D3S
Data Sheet
December 2001
19A, 55V, 0.070 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75309.
Features
• 19A, 55V
• Simulation Models
- Temperature Compensated PSPICE
®
and SABER
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER
HUF75309P3
HUF75309D3
HUF75309D3S
PACKAGE
TO-220AB
TO-251AA
TO-252AA
BRAND
75309P
75309D
75309D
S
G
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF75309D3ST.
Packaging
JEDEC STYLE TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
JEDEC TO-251AA
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SOURCE
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75309P3, HUF75309D3, HUF75309D3S Rev. B

HUF75309P3 Related Products

HUF75309P3 HUF75309D3 HUF75309D3S
Description 19 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 17 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA 17 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Is it Rohs certified? conform to incompatible conform to
package instruction FLANGE MOUNT, R-PSFM-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknow unknow _compli
ECCN code EAR99 EAR99 EAR99
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V 55 V
Maximum drain current (Abs) (ID) 19 A 19 A 19 A
Maximum drain current (ID) 19 A 19 A 19 A
Maximum drain-source on-resistance 0.07 Ω 0.07 Ω 0.07 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-251AA TO-252AA
JESD-30 code R-PSFM-T3 R-PSIP-T3 R-PSSO-G2
JESD-609 code e3 e0 e3
Number of components 1 1 1
Number of terminals 3 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT APPLICABLE NOT SPECIFIED 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 55 W 55 W 55 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO YES
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT APPLICABLE NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Maker Fairchild - Fairchild
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