HUF76419D3, HUF76419D3S
Data Sheet
December 2001
20A, 60V, 0.043 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
Features
• Ultra Low On-Resistance
- r
DS(ON)
= 0.037Ω,
V
GS
=
10V
- r
DS(ON)
= 0.043Ω,
V
GS
=
5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
HUF76419D3
HUF76419D3S
Symbol
D
• Switching Time vs R
GS
Curves
Ordering Information
PART NUMBER
PACKAGE
TO-251AA
TO-252AA
BRAND
76419D
76419D
HUF76419D3
HUF76419D3S
G
S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76419D3ST
T
C
= 25
o
C, Unless Otherwise Specified
HUF76419D3, HUF76419D3S
UNITS
V
V
V
A
A
A
A
60
60
±16
20
20
20
19
Figure 4
Figures 6, 17, 18
75
0.5
-55 to 175
300
260
W
W/
o
C
o
C
o
C
o
C
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTE:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF76419D3, HUF76419D3S Rev. B
HUF76419D3, HUF76419D3S
Electrical Specifications
PARAMETER
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
V
GS(TH)
r
DS(ON)
I
D
= 250µA, V
GS
= 0V (Figure 12)
I
D
= 250µA, V
GS
= 0V , T
C
= -40
o
C (Figure 12)
Zero Gate Voltage Drain Current
V
DS
= 55V, V
GS
= 0V
V
DS
= 50V, V
GS
= 0V, T
C
= 150
o
C
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
GS
= V
DS
, I
D
= 250µA (Figure 11)
I
D
= 20A, V
GS
= 10V (Figures 9, 10)
I
D
= 20A, V
GS
= 5V (Figure 9)
I
D
= 19A, V
GS
= 4.5V (Figure 9)
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
R
θJC
R
θJA
TO-251,TO-252
-
-
-
-
2.00
100
o
C/W
o
C/W
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
60
55
-
-
-
-
-
-
-
-
-
-
1
250
±100
V
V
µA
µA
nA
V
GS
=
±16V
1
-
-
-
-
0.031
0.036
0.038
3
0.037
0.043
0.046
V
Ω
Ω
Ω
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 30V,
I
D
= 20A,
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
V
DD
= 30V, I
D
= 20A
V
GS
=
10V,
R
GS
= 13Ω
(Figures 16, 21, 22)
V
DD
= 30V, I
D
= 19A
V
GS
=
4.5V, R
GS
= 13Ω
(Figures 15, 21, 22)
-
-
-
-
-
-
-
12
124
28
50
-
205
-
-
-
-
115
ns
ns
ns
ns
ns
ns
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
-
900
250
45
-
-
-
pF
pF
pF
-
-
-
-
-
23
12.5
0.9
2.7
5.9
27.5
15
1.05
-
-
nC
nC
nC
nC
nC
-
-
-
-
-
-
-
6.5
35
50
50
-
62
-
-
-
-
150
ns
ns
ns
ns
ns
ns
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
SYMBOL
V
SD
t
rr
Q
RR
I
SD
= 20A
I
SD
= 10A
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 20A, dI
SD
/dt = 100A/µs
I
SD
= 20A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
-
TYP
-
-
-
-
MAX
1.25
1.0
74
200
UNITS
V
V
ns
nC
©2001 Fairchild Semiconductor Corporation
HUF76419D3, HUF76419D3S Rev. B
HUF76419D3, HUF76419D3S
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
25
20
V
GS
= 10V
15
V
GS
= 4.5V
10
5
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
THERMAL IMPEDANCE
Z
θJC
, NORMALIZED
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
SINGLE PULSE
0.01
10
-5
10
-4
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
0
10
1
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
500
I
DM
, PEAK CURRENT (A)
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
I = I
25
175 - T
C
150
100
V
GS
= 5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-5
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
10
FIGURE 4. PEAK CURRENT CAPABILITY
©2001 Fairchild Semiconductor Corporation
HUF76419D3, HUF76419D3S Rev. B
HUF76419D3, HUF76419D3S
Typical Performance Curves
200
I
AS
, AVALANCHE CURRENT (A)
100
I
D
, DRAIN CURRENT (A)
(Continued)
200
100
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
100µs
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
SINGLE PULSE
T
J
= MAX RATED T
C
= 25
o
C
1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
200
10
10
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
1ms
10ms
1
0.01
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
D
, DRAIN CURRENT (A)
50
V
GS
= 10V
40
V
GS
= 5V
30
V
GS
= 3.5V
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
T
C
= 25
o
C
0
V
GS
= 3V
4
V
GS
= 4V
40
I
D,
DRAIN CURRENT (A)
30
20
T
J
= 25
o
C
10
T
J
= 175
o
C
0
1
2
3
4
5
T
J
= -55
o
C
0
V
GS
, GATE TO SOURCE VOLTAGE (V)
1
2
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
50
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
I
D
= 10A
40
I
D
= 20A
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
45
1.5
35
1.0
V
GS
= 10V, I
D
= 20A
0.5
-80
-40
0
40
80
120
160
200
30
25
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HUF76419D3, HUF76419D3S Rev. B
HUF76419D3, HUF76419D3S
Typical Performance Curves
1.2
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
1.0
(Continued)
1.2
I
D
= 250µA
1.1
0.8
1.0
0.6
0.4
-80
-40
0
40
80
120
160
o
C)
T
J
, JUNCTION TEMPERATURE (
200
0.9
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
2000
1000
C, CAPACITANCE (pF)
C
ISS
=
C
GS
+ C
GD
V
DD
= 30V
8
6
C
OSS
≅
C
DS
+ C
GD
100
4
2
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 20A
I
D
= 10A
V
GS
= 0V, f = 1MHz
20
0.1
C
RSS
=
C
GD
60
0
0
5
10
15
20
Q
g
, GATE CHARGE (nC)
25
30
1.0
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
300
V
GS
= 4.5V, V
DD
= 30V, I
D
= 19A
250
SWITCHING TIME (ns)
200
150
t
f
100
t
d(OFF)
50
t
d(ON)
0
0
10
20
30
40
50
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
SWITCHING TIME (ns)
t
r
180
V
GS
= 10V, V
DD
= 30V, I
D
= 20A
150
t
d(OFF)
120
90
t
r
60
30
0
0
10
20
30
40
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
50
t
f
t
d(ON)
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
©2001 Fairchild Semiconductor Corporation
HUF76419D3, HUF76419D3S Rev. B
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