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HVC355B

Description
6.8 pF, SILICON, VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size21KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
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HVC355B Overview

6.8 pF, SILICON, VARIABLE CAPACITANCE DIODE

HVC355B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHitachi (Renesas )
Parts packaging codeSC-79
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Minimum diode capacitance ratio2.2
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage15 V
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Base Number Matches1
HVC355B
Variable Capacitance Diode for VCO
ADE-208-416(Z)
Rev 0
October 1996
Features
High capacitance ratio. (n =2.20.min)
Low series resistance. (rs=0.6 max)
Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No.
HVC355B
Laser Mark
B1
Package Code
UFP
Outline
Cathode mark
Mark
1
B1
2
1. Cathode
2. Anode

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Description 6.8 pF, SILICON, VARIABLE CAPACITANCE DIODE 6.8 pF, SILICON, VARIABLE CAPACITANCE DIODE
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