BA1A4P datasheet, PDF - EEWORLD Datasheet

BA1A4P: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon; CategoryDiscrete semiconductor The transistor; File Size127KB，2 Pages; ManufacturerNEC Electronics

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BA1A4P Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	NEC Electronics
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 4.7
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	95
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	6000 ns
Maximum opening time (tons)	200 ns
Base Number Matches	1

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