EEWORLDEEWORLDEEWORLD

Part Number

Search

HX6656KQNT

Description
32K x 8 ROM-SOI
File Size152KB,12 Pages
ManufacturerETC
Download Datasheet View All

HX6656KQNT Overview

32K x 8 ROM-SOI

Military & Space Products
32K x 8 ROM—SOI
FEATURES
RADIATION
• Fabricated with RICMOS
IV Silicon on Insulator
(SOI) 0.75
µm
Process (L
eff
= 0.6
µm)
• Total Dose Hardness through 1x10
6
rad(SiO
2
)
• Typical Operating Power <15 mW/MHz
• Dynamic and Static Transient Upset
Hardness through 1x10
9
rad(Si)/s
• Dose Rate Survivability through 1x10
11
rad(Si)/s
• Neutron Hardness through 1x10
14
cm
-2
• SEU Immune
• Latchup Free
• Asynchronous Operation
• CMOS or TTL Compatible I/O
• Single 5 V
±
10% Power Supply
OTHER
• Read Cycle Times
< 17 ns (Typical)
25 ns (-55 to 125°C)
HX6656
• Packaging Options
- 28-Lead Flat Pack (0.500 in. x 0.720 in.)
- 28-Lead DIP, MIL-STD-1835, CDIP2-T28
- 36-Lead Flat Pack (0.630 in. x 0.650 in.)
GENERAL DESCRIPTION
The 32K x 8 Radiation Hardened ROM is a high perform-
ance 32,768 word x 8-bit read only memory with industry-
standard functionality. It is fabricated with Honeywell’s
radiation hardened technology, and is designed for use in
systems operating in radiation environments. The ROM
operates over the full military temperature range and re-
quires only a single 5 V
±
10% power supply. The ROM is
available with either TTL or CMOS compatible I/O. Power
consumption is typically less than 15 mW/MHz in operation,
and less than 5 mW when de-selected. The ROM operation
is fully asynchronous, with an associated typical access
time of 14 ns.
Honeywell’s enhanced SOI RICMOS
IV (Radiation Insen-
sitive CMOS) technology is radiation hardened through the
use of advanced and proprietary design, layout, and pro-
cess hardening techniques. The RICMOS
IV process is a
5-volt, SIMOX CMOS technology with a 150 Å gate oxide
and a minimum drawn feature size of 0.75
µm
(0.6
µm
effective gate length—L
eff
). Additional features include
tungsten via plugs, Honeywell’s proprietary SHARP pla-
narization process, and a lightly doped drain (LDD) struc-
ture for improved short channel reliability.
What is the reason for the flyback power supply duty cycle waveform
What is the reason for the uneven duty cycle waveform of the flyback power supply? The flyback power supply circuit is made, with an input of 90V~265v and an output of 15V2A. The magnetic core EI30Ae=...
灞波儿奔 Power technology
Can a low noise PGA be implemented using a digital potentiometer?
As shown in the figure below, I want to add a PGA (Programmable Gain Amplifier) to the front end of a high-bit ADC. I see that the noise of the off-the-shelf PGA is usually quite high. I don't know mu...
littleshrimp Analog electronics
MSP430F5529A ADC problem
[backcolor=white]This is a routine found online, ADC program: void ADC(void) { WDTCTL = WDTPW + WDTHOLD; // Stop WDT ADC12CTL0 = ADC12SHT02 + ADC12ON; // Sampling time, ADC12 on ADC12CTL1 = ADC12SHP; ...
sharley Microcontroller MCU
Frequency measurement trigger edge interrupt cannot be entered.
[align=left][color=#000]void main(void) { WDTCTL = WDTPW + WDTHOLD; // Stop WDT P1SEL|=BIT2; P1IE|=BIT2;// P1.0 output P1IES=BIT2; TA1CCTL0 = CM_1 +SCS+CCIS_0+CAP+CCIE; // CCR0 interrupt enabled TA1CC...
zjxjndx Microcontroller MCU
Questions about off-chip RAM in Keil
[code]MOV A,#30H MOV R1,#0E0H MOVX @R1,A MOVX A,@R1[/code] It means an operation on the off-chip RAM. In the simulation under Keil, I call the memory and input I:0e0h. The actual value is 00. Why? Sho...
damafeng Embedded System
Electronic Competition Notice
[i=s]This post was last edited by paulhyde on 2014-9-15 09:37[/i] Check in at 7:30 am on September 2nd, bring your student ID card for verification. 1. Design report. 2. Physical objects. 3. Registrat...
dtcxn Electronics Design Contest

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1843  2461  1467  2308  2517  38  50  30  47  51 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号