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5962-3826703MTA

Description
EEPROM
Categorystorage    storage   
File Size504KB,31 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Parametric View All

5962-3826703MTA Overview

EEPROM

5962-3826703MTA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrochip
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
AT28C010
Military Grade 1-Mbit (131,072 x 8) Paged Parallel EEPROM
Features
Fast Read Access Time: 120 ns
Automatic Page Write Operation:
– Internally organized as 131,072 x 8 (1 Mbit)
– Internal address and data latches for 128 bytes
– Internal control timer
Fast Write Cycle Time:
– Page Write cycle time: 10 ms maximum
– 1 to 128-byte Page Write operation
Low-Power Dissipation:
– 80 mA active current
– 300 µA CMOS standby current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology:
– Endurance: 10,000 or 100,000 cycles
– Data retention: 10 years
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
®
JEDEC Approved Byte-Wide Pinout
Packages
32-Lead CERDIP, 32-Lead Flatpack, 32-Lead CLCC and 30-Pin PGA
©
2020 Microchip Technology Inc.
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