2N2905ALJX datasheet, PDF - EEWORLD Datasheet

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2N2905ALJX: DescriptionSmall Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3; CategoryDiscrete semiconductor The transistor; File Size666KB，2 Pages; ManufacturerSemicoa; Websitehttp://www.snscorp.com/Semicoa.htm

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2N2905ALJX Overview

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3

2N2905ALJX Parametric

Parameter Name	Attribute value
Parts packaging code	TO-5
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.6 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JEDEC-95 code	TO-5
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Guideline	MIL-19500
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Maximum off time (toff)	300 ns
Maximum opening time (tons)	45 ns
Base Number Matches	1

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2N2905AL

Silicon PNP Transistor

Data Sheet

Description

EMICOA Corporation

offers:

•

Screening and processing per MIL-PRF-19500

Appendix E

•

JAN level (2N2905ALJ)

•

JANTX level (2N2905ALJX)

•

JANTXV level (2N2905ALJV)

•

JANS level (2N2905ALJS)

•

JANSR level (2N2905ALJSR)

•

JANSF level (2N2905ALJSF)

•

QCI to the applicable level

•

100% die visual inspection per MIL-STD-750 method

2072 for JANTXV and JANS

•

Radiation testing (total dose) upon request

Applications

•

General purpose

•

Low power

•

PNP silicon transistor

Features

•

Hermetically sealed TO-5 metal can

Also available in chip configuration

Chip geometry 0600

Reference document:

MIL-PRF-19500/290

Benefits

Please contact S

EMICOA

for special configurations

www.SEMICOA.com or (714) 979-1900

Absolute Maximum Ratings

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current, Continuous

Power Dissipation, T

= 25

°C

Derate linearly above 60

°C

Power Dissipation, T

= 25

°C

Derate linearly above 25

°C

Thermal Resistance

Operating Junction Temperature

Storage Temperature

Symbol

CEO

CBO

EBO

•

Qualification Levels: JAN, JANTX,

JANTXV

JANS

, JANSR AND JANSF

•

Radiation testing available

= 25°C unless otherwise specified

θJA

STG

Rating

600

0.8

5.7

3.0

17.2

-65 to +200

Unit

Volts

mW/°C

°C/W

°C

Rev. H

SEMICOA Corporation

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

Page 1 of 1

www.SEMICOA.com

2N2905ALJX Related Products

	2N2905ALJX	2N2905ALJ	2N2905ALJSR	2N2905ALJV	2N2905ALJS	2N2905ALJSF	JANTXVR2N2905AL
Description	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	,	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	,	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknow
Parts packaging code	TO-5	TO-5	-	TO-5	TO-5	-	-
Contacts	3	3	-	3	3	-	-
ECCN code	EAR99	EAR99	-	EAR99	EAR99	-	-
Maximum collector current (IC)	0.6 A	0.6 A	-	0.6 A	0.6 A	-	0.6 A
Collector-emitter maximum voltage	60 V	60 V	-	60 V	60 V	-	60 V
Configuration	SINGLE	SINGLE	-	SINGLE	SINGLE	-	SINGLE
Minimum DC current gain (hFE)	50	50	-	50	50	-	50
JEDEC-95 code	TO-5	TO-5	-	TO-5	TO-5	-	TO-5
JESD-30 code	O-MBCY-W3	O-MBCY-W3	-	O-MBCY-W3	O-MBCY-W3	-	O-MBCY-W3
Number of components	1	1	-	1	1	-	1
Number of terminals	3	3	-	3	3	-	3
Package body material	METAL	METAL	-	METAL	METAL	-	METAL
Package shape	ROUND	ROUND	-	ROUND	ROUND	-	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	-	CYLINDRICAL	CYLINDRICAL	-	CYLINDRICAL
Polarity/channel type	PNP	PNP	-	PNP	PNP	-	PNP
Guideline	MIL-19500	MIL-19500	-	MIL-19500	MIL-19500	-	MIL-19500; RH - 100K Rad(Si)
surface mount	NO	NO	-	NO	NO	-	NO
Terminal form	WIRE	WIRE	-	WIRE	WIRE	-	WIRE
Terminal location	BOTTOM	BOTTOM	-	BOTTOM	BOTTOM	-	BOTTOM
Transistor component materials	SILICON	SILICON	-	SILICON	SILICON	-	SILICON
Maximum off time (toff)	300 ns	300 ns	-	300 ns	300 ns	-	300 ns
Maximum opening time (tons)	45 ns	45 ns	-	45 ns	45 ns	-	45 ns
Base Number Matches	1	1	1	1	1	1	-

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