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2N2905ALJSR

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size666KB,2 Pages
ManufacturerSemicoa
Websitehttp://www.snscorp.com/Semicoa.htm
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2N2905ALJSR Overview

Small Signal Bipolar Transistor,

2N2905ALJSR Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
2N2905AL
Silicon PNP Transistor
Data Sheet
Description
S
EMICOA Corporation
offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N2905ALJ)
JANTX level (2N2905ALJX)
JANTXV level (2N2905ALJV)
JANS level (2N2905ALJS)
JANSR level (2N2905ALJSR)
JANSF level (2N2905ALJSF)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Applications
General purpose
Low power
PNP silicon transistor
Features
Hermetically sealed TO-5 metal can
Also available in chip configuration
Chip geometry 0600
Reference document:
MIL-PRF-19500/290
Benefits
Please contact S
EMICOA
for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25
°C
Derate linearly above 60
°C
Power Dissipation, T
C
= 25
°C
Derate linearly above 25
°C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
Qualification Levels: JAN, JANTX,
JANTXV
,
JANS
, JANSR AND JANSF
Radiation testing available
T
C
= 25°C unless otherwise specified
R
θJA
T
J
T
STG
Rating
60
60
5
600
0.8
5.7
3.0
17.2
58
-65 to +200
Unit
Volts
Volts
Volts
mA
W
mW/°C
W
mW/°C
°C/W
°C
Copyright 20
10
Rev. H
SEMICOA Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 1
www.SEMICOA.com

2N2905ALJSR Related Products

2N2905ALJSR 2N2905ALJ 2N2905ALJX 2N2905ALJV 2N2905ALJS 2N2905ALJSF JANTXVR2N2905AL
Description Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3 Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3 Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3 Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3 Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3
package instruction , CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 , CYLINDRICAL, O-MBCY-W3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknow
Base Number Matches 1 1 1 1 1 1 -
Parts packaging code - TO-5 TO-5 TO-5 TO-5 - -
Contacts - 3 3 3 3 - -
ECCN code - EAR99 EAR99 EAR99 EAR99 - -
Maximum collector current (IC) - 0.6 A 0.6 A 0.6 A 0.6 A - 0.6 A
Collector-emitter maximum voltage - 60 V 60 V 60 V 60 V - 60 V
Configuration - SINGLE SINGLE SINGLE SINGLE - SINGLE
Minimum DC current gain (hFE) - 50 50 50 50 - 50
JEDEC-95 code - TO-5 TO-5 TO-5 TO-5 - TO-5
JESD-30 code - O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 - O-MBCY-W3
Number of components - 1 1 1 1 - 1
Number of terminals - 3 3 3 3 - 3
Package body material - METAL METAL METAL METAL - METAL
Package shape - ROUND ROUND ROUND ROUND - ROUND
Package form - CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL - CYLINDRICAL
Polarity/channel type - PNP PNP PNP PNP - PNP
Guideline - MIL-19500 MIL-19500 MIL-19500 MIL-19500 - MIL-19500; RH - 100K Rad(Si)
surface mount - NO NO NO NO - NO
Terminal form - WIRE WIRE WIRE WIRE - WIRE
Terminal location - BOTTOM BOTTOM BOTTOM BOTTOM - BOTTOM
Transistor component materials - SILICON SILICON SILICON SILICON - SILICON
Maximum off time (toff) - 300 ns 300 ns 300 ns 300 ns - 300 ns
Maximum opening time (tons) - 45 ns 45 ns 45 ns 45 ns - 45 ns

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