BAP51L
Silicon PIN diode
Rev. 01 — 11 March 2005
Product data sheet
1. Product profile
1.1 General description
Planar PIN diode in a SOD882 leadless ultra small SMD plastic package.
1.2 Features
s
s
s
s
s
High speed switching for RF signals
Low diode capacitance
Low forward resistance
Very low series inductance
For applications up to 3 GHz
1.3 Applications
s
RF attenuators and switches
2. Pinning information
Table 1:
Pin
1
2
Pinning
Description
cathode
anode
1
2
sym006
Simplified outline
[1]
Symbol
Transparent
top view
[1]
The marking bar indicates the cathode
3. Ordering information
Table 2:
Ordering information
Package
Name
BAP51L
-
Description
leadless ultra small plastic package; 2 terminals;
body 1.0
×
0.6
×
0.5 mm
Version
SOD882
Type number
Philips Semiconductors
BAP51L
Silicon PIN diode
4. Marking
Table 3:
BAP51L
Marking
Marking code
E2
Type number
5. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
P
tot
T
stg
T
j
Parameter
reverse voltage
forward current
total power dissipation
storage temperature
junction temperature
T
sp
= 90
°C
Conditions
Min
-
-
-
−65
−65
Max
60
100
500
+150
+150
Unit
V
mA
mW
°C
°C
6. Thermal characteristics
Table 5:
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
Typ
100
Unit
K/W
7. Characteristics
Table 6:
Electrical characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
I
R
C
d
Parameter
forward voltage
reverse current
diode capacitance
Conditions
I
F
= 50 mA
V
R
= 50 V
f = 1 MHz; see
Figure 2
V
R
= 0 V
V
R
= 1 V
V
R
= 5 V
r
D
diode forward resistance
f = 100 MHz; see
Figure 1
I
F
= 0.5 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
s
21
2
isolation
V
R
= 0 V; see
Figure 4
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
9397 750 14554
Min
-
-
-
-
-
-
-
-
-
-
-
-
Typ
0.95
-
0.30
0.23
0.17
5.3
3.5
1.4
0.9
19
15
13
Max
1.1
100
-
0.4
0.3
9
6.5
2.5
1.5
-
-
-
Unit
V
nA
pF
pF
pF
Ω
Ω
Ω
Ω
dB
dB
dB
2 of 8
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 11 March 2005
Philips Semiconductors
BAP51L
Silicon PIN diode
Table 6:
Electrical characteristics
…continued
T
j
= 25
°
C unless otherwise specified.
Symbol
s
21
2
Parameter
insertion loss
Conditions
I
F
= 0.5 mA; see
Figure 3
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
s
21
2
insertion loss
I
F
= 1 mA; see
Figure 3
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
s
21
2
insertion loss
I
F
= 10 mA; see
Figure 3
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
s
21
2
insertion loss
I
F
= 100 mA; see
Figure 3
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
τ
L
charge carrier life time
when switched from
I
F
= 10 mA to I
R
= 6 mA;
R
L
= 100
Ω;
measured at I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
-
-
-
-
0.07
0.07
0.09
0.55
-
-
-
-
dB
dB
dB
µs
-
-
-
0.11
0.11
0.12
-
-
-
dB
dB
dB
-
-
-
0.26
0.26
0.27
-
-
-
dB
dB
dB
-
-
-
0.4
0.39
0.4
-
-
-
dB
dB
dB
Min
Typ
Max
Unit
L
S
series inductance
-
0.6
-
nH
10
2
r
D
(Ω)
10
001aac397
400
C
d
(fF)
300
001aac396
200
1
100
10
−1
10
−1
1
10
I
F
(mA)
10
2
0
0
5
10
15
V
R
(V)
20
f = 100 MHz; T
j
= 25
°C
f = 1 MHz; T
j
= 25
°C
Fig 1. Forward resistance as a function of forward
current; typical values
Fig 2. Diode capacitance as a function of reverse
voltage; typical values
9397 750 14554
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 11 March 2005
3 of 8
Philips Semiconductors
BAP51L
Silicon PIN diode
0
(1)
(2)
001aac399
0
s
21 2
(dB)
−10
001aac398
s
21 2
(dB)
(3)
(4)
−0.5
−20
−30
−1
0
1000
2000
f (MHz)
3000
−40
0
1000
2000
f (MHz)
3000
T
amb
= 25
°C
(1) I
F
= 100 mA
(2) I
F
= 10 mA
(3) I
F
= 1 mA
(4) I
F
= 0.5 mA
Diode inserted in series with a 50
Ω
stripline circuit
and biased via the analyzer Tee network
T
amb
= 25
°C
Diode zero biased and inserted in series with a 50
Ω
stripline circuit
Fig 3. Insertion loss (|s
21
|
2
) of the diode as a function
of frequency; typical values
Fig 4. Isolation (|s
21
|
2
) of the diode as a function of
frequency; typical values
9397 750 14554
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 11 March 2005
4 of 8
Philips Semiconductors
BAP51L
Silicon PIN diode
8. Package outline
Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm
SOD882
L
L
1
2
b
e1
A
A1
E
D
(2)
0
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
(1)
0.50
0.46
A
1
max.
0.03
b
0.55
0.47
D
0.62
0.55
E
1.02
0.95
e
1
0.65
L
0.30
0.22
0.5
scale
1 mm
Notes
1. Including plating thickness
2. The marking bar indicates the cathode
OUTLINE
VERSION
SOD882
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
03-04-16
03-04-17
Fig 5. Package outline SOD882
9397 750 14554
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 11 March 2005
5 of 8
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