PT3642
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI PT3642
is Designed for
Class A,B,C Amplifier, Oscillator and
Driver Applications Covering 130 to
400MHz.
PACKAGE STYLE TO- 60
FEATURES INCLUDE:
•
Emitter Ballasted
•
Common Emitter Package
MAXIMUM RATINGS
I
C
V
CE
P
DISS
T
J
T
STG
θ
JC
3.0 A
40 V
23 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
7.6 °C/W
1 = EMITTER
3 = COLLECTOR
2 = BASE
CASE = EMITTER
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CEX
BV
CBO
I
CEO
I
EBO
h
FE
C
ob
f
t
P
out
G
P
η
C
T
C
= 25 °C
TEST CONDITIONS
I
C
= 200 mA
I
C
= 200 mA
I
C
= 500
µA
V
CE
= 30 V
V
EB
= 4.0 V
V
CE
= 5.0 V
V
CB
= 30 V
V
CE
= 28 V
I
C
= 150 mA
I
C
= 1.0 A
f = 1.0 MHz
f = 100 MHz
V
BE
= -1.5 V
MINIMUM TYPICAL MAXIMUM
40
65
65
250
250
5.0
20
400
13.5
5.8
70
UNITS
V
V
V
µ
A
µ
A
---
pF
MHz
W
dB
%
V
CE
= 28 V
f = 175 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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