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HF5-12F

Description
UHF BAND, Si, NPN, RF POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size16KB,1 Pages
ManufacturerASI [ASI Semiconductor, Inc]
Download Datasheet Parametric Compare View All

HF5-12F Overview

UHF BAND, Si, NPN, RF POWER TRANSISTOR

HF5-12F Parametric

Parameter NameAttribute value
Maximum collector current25 A
Maximum Collector-Emitter Voltage30 V
Number of terminals4
Processing package descriptionFM-4
stateActive
Maximum Collector Base Capacitance100 pF
structureSingle
Minimum DC amplification factor15
highest frequency bandULTRA HIGH FREQUENCY BAND
jesd_30_codeR-CDFM-F4
Maximum operating temperature200 Cel
Packaging MaterialsCERAMIC, METAL-SEALED COFIRED
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
larity_channel_typeNPN
wer_dissipation_max__abs_310 W
qualification_statusCOMMERCIAL
sub_categoryOther Transistors
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
PT3642
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI PT3642
is Designed for
Class A,B,C Amplifier, Oscillator and
Driver Applications Covering 130 to
400MHz.
PACKAGE STYLE TO- 60
FEATURES INCLUDE:
Emitter Ballasted
Common Emitter Package
MAXIMUM RATINGS
I
C
V
CE
P
DISS
T
J
T
STG
θ
JC
3.0 A
40 V
23 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
7.6 °C/W
1 = EMITTER
3 = COLLECTOR
2 = BASE
CASE = EMITTER
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CEX
BV
CBO
I
CEO
I
EBO
h
FE
C
ob
f
t
P
out
G
P
η
C
T
C
= 25 °C
TEST CONDITIONS
I
C
= 200 mA
I
C
= 200 mA
I
C
= 500
µA
V
CE
= 30 V
V
EB
= 4.0 V
V
CE
= 5.0 V
V
CB
= 30 V
V
CE
= 28 V
I
C
= 150 mA
I
C
= 1.0 A
f = 1.0 MHz
f = 100 MHz
V
BE
= -1.5 V
MINIMUM TYPICAL MAXIMUM
40
65
65
250
250
5.0
20
400
13.5
5.8
70
UNITS
V
V
V
µ
A
µ
A
---
pF
MHz
W
dB
%
V
CE
= 28 V
f = 175 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1

HF5-12F Related Products

HF5-12F ASIPT3642
Description UHF BAND, Si, NPN, RF POWER TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR
Maximum collector current 25 A 25 A
Maximum Collector-Emitter Voltage 30 V 30 V
Number of terminals 4 4
Processing package description FM-4 FM-4
state Active Active
Maximum Collector Base Capacitance 100 pF 100 pF
structure Single Single
Minimum DC amplification factor 15 15
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
jesd_30_code R-CDFM-F4 R-CDFM-F4
Maximum operating temperature 200 Cel 200 Cel
Packaging Materials CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
packaging shape RECTANGULAR RECTANGULAR
Package Size FLANGE MOUNT FLANGE MOUNT
larity_channel_type NPN NPN
wer_dissipation_max__abs_ 310 W 310 W
qualification_status COMMERCIAL COMMERCIAL
sub_category Other Transistors Other Transistors
surface mount YES YES
Terminal form FLAT FLAT
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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