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B25RIA10L

Description
Silicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element
CategoryAnalog mixed-signal IC    Trigger device   
File Size224KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Related ProductsFound2parts with similar functions to B25RIA10L
Download Datasheet Parametric View All

B25RIA10L Overview

Silicon Controlled Rectifier, 39.25A I(T)RMS, 25000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element

B25RIA10L Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-PUFM-X3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
Nominal circuit commutation break time110 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage100 V/us
Maximum DC gate trigger current60 mA
Maximum DC gate trigger voltage2 V
Quick connection descriptionA-G-K
Description of screw terminals0
Maximum holding current100 mA
JESD-30 codeR-PUFM-X3
JESD-609 codee0
Maximum leakage current10 mA
On-state non-repetitive peak current410 A
Number of components1
Number of terminals3
Maximum on-state current25000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current39.25 A
Maximum repetitive peak off-state leakage current10000 µA
Off-state repetitive peak voltage100 V
Repeated peak reverse voltage100 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
Base Number Matches1
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B25RIA10L Vishay(威世) Silicon Controlled Rectifier, 39.25A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element
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