BSP60-TAPE-13 datasheet, PDF - EEWORLD Datasheet

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BSP60-TAPE-13: DescriptionTRANSISTOR 0.5 A, 45 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size54KB，3 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BSP60-TAPE-13 Overview

TRANSISTOR 0.5 A, 45 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power

BSP60-TAPE-13 Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	45 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	2000
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
VCEsat-Max	1.3 V
Base Number Matches	1

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BSP60-TAPE-13 Related Products

	BSP60-TAPE-13	BSP61-TAPE-13	BSP60-TAPE-7	BSP61-TAPE-7	BSP62-TAPE-13	BSP62-TAPE-7
Description	TRANSISTOR 0.5 A, 45 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power	TRANSISTOR 0.5 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power	TRANSISTOR 0.5 A, 45 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power	TRANSISTOR 0.5 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power	TRANSISTOR 0.5 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power	TRANSISTOR 0.5 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	45 V	60 V	45 V	60 V	80 V	80 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	2000	2000	2000	2000	2000	2000
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
VCEsat-Max	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V
Base Number Matches	1	1	1	1	-	-

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