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KSC2331R

Description
Small Signal Bipolar Transistor, 0.7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92L, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size38KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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KSC2331R Overview

Small Signal Bipolar Transistor, 0.7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92L, 3 PIN

KSC2331R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeTO-92
package instructionTO-92L, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.7 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)40 MHz
Base Number Matches1
KSC2331
KSC2331
Low Frequency Amplifier & Medium Speed
Switching
Complement to KSA931
High Collector-Base Voltage : V
CBO
=80V
Collector Current : I
C
=700mA
Collector Dissipation : P
C
=1W
1
TO-92L
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
80
60
8
700
1
150
-55 ~ 150
Units
V
V
V
mA
W
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=100µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=50mA
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
30
40
0.2
0.86
50
8
Min.
80
60
8
0.1
0.1
240
0.7
1.20
V
V
MHz
pF
Typ.
Max.
Units
V
V
V
µA
µA
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002

KSC2331R Related Products

KSC2331R KSC2331Y KSC2331O
Description Small Signal Bipolar Transistor, 0.7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92L, 3 PIN Small Signal Bipolar Transistor, 0.7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92L, 3 PIN Small Signal Bipolar Transistor, 0.7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92L, 3 PIN
Is it Rohs certified? incompatible incompatible incompatible
Parts packaging code TO-92 TO-92 TO-92
package instruction TO-92L, 3 PIN TO-92L, 3 PIN TO-92L, 3 PIN
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Maker Fairchild - Fairchild
Maximum collector current (IC) 0.7 A 0.7 A -
Collector-emitter maximum voltage 60 V 60 V -
Configuration SINGLE SINGLE -
Minimum DC current gain (hFE) 40 120 -
JEDEC-95 code TO-92 TO-92 -
JESD-30 code O-PBCY-T3 O-PBCY-T3 -
JESD-609 code e0 e0 -
Number of components 1 1 -
Number of terminals 3 3 -
Maximum operating temperature 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape ROUND ROUND -
Package form CYLINDRICAL CYLINDRICAL -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type NPN NPN -
Maximum power dissipation(Abs) 1 W 1 W -
Certification status Not Qualified Not Qualified -
surface mount NO NO -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Terminal form THROUGH-HOLE THROUGH-HOLE -
Terminal location BOTTOM BOTTOM -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
Nominal transition frequency (fT) 40 MHz 40 MHz -
Base Number Matches 1 1 -
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