Power Transistors
2SB1416
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD2136
3.8
±0.2
7.5
±0.2
Unit: mm
4.5
±0.2
■
Features
•
High forward current transfer ratio h
FE
which has satisfactory
linearity
•
Low collector-emitter saturation voltage V
CE(sat)
•
Allowing automatic insertion with radial taping
10.8
±0.2
0.65
±0.1
2.5
±0.1
0.85
±0.1
1.0
±0.1
0.8 C
90˚
0.8 C
16.0
±1.0
0.7
±0.1
0.7
±0.1
1.15
±0.2
1.15
±0.2
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−60
−60
−5
−3
−5
1.5
150
−55
to
+150
Unit
V
V
V
A
A
W
°C
°C
2.5
±0.2
0.8 C
1
2
3
0.5
±0.1
2.05
±0.2
0.4
±0.1
2.5
±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Base-emitter voltage
Collector-emitter cutoff current (E-B short)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
V
BE
I
CES
I
CEO
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
I
C
= −30
mA, I
B
=
0
V
CE
= −4
V, I
C
= −3
A
V
CE
= −60
V, V
BE
=
0
V
CE
= −30
V, I
B
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −4
V, I
C
= −1
A
V
CE
= −4
V, I
C
= −3
A
I
C
= −3
A, I
B
= −
0.375A
V
CB
= −5
V, I
E
=
0.1 A, f
=
200 MHz
I
C
= −1
A, I
B1
= −
0.1 A, I
B2
=
0.1 A
270
0.5
1.2
0.3
40
10
−1.2
V
MHz
µs
µs
µs
Min
−60
−1.8
−200
−300
−1
250
Typ
Max
Unit
V
V
µA
µA
mA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
P
40 to 90
Q
70 to 150
R
120 to 250
Publication date: March 2003
SJD00071BED
1
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•
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•
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