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HYM322160S

Description
2M x 32-Bit Dynamic RAM Module
File Size139KB,9 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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HYM322160S Overview

2M x 32-Bit Dynamic RAM Module

2M x 32-Bit Dynamic RAM Module
HYM 322160S/GS-60/-70
Advanced Information
2 097 152 words by 32-Bit organization
(alternative 4 194 304 words by 16-Bit)
Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
Fast page mode capability with
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
Single + 5 V (± 10 %) supply
Low power dissipation
max. 4840 mW active (-60 version)
max. 4400 mW active (-70 version)
CMOS – 88 mW standby
TTL – 176 mW standby
CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
8 decoupling capacitors mounted on
substrate
All inputs, outputs and clocks fully TTL
compatible
72 pin double-sided Single in-Line Memory
Module with 25.4 mm (1000 mil) height
Utilizes sixteen 1M
×
4 DRAMs in 300 mil
SOJ packages
1024 refresh cycles / 16 ms
Tin-Lead contact pads (S - version)
Gold contact pads (GS - version)
Ordering Information
Type
HYM 322160S-60
HYM 322160S-70
HYM 322160GS-60
HYM 322160GS-70
Ordering Code
Q67100-Q2014
Q67100-Q2015
Q67100-Q2016
Q67100-Q2017
Package
L-SIM-72-11
L-SIM-72-11
L-SIM-72-11
L-SIM-72-11
Description
DRAM Module
(access time 60 ns)
DRAM Module
(access time 70 ns)
DRAM Module
(access time 60 ns)
DRAM Module
(access time 70 ns)
Semiconductor Group
551
09.94

HYM322160S Related Products

HYM322160S Q67100-Q2017 Q67100-Q2016 Q67100-Q2015 Q67100-Q2014 HYM322160GS-60 HYM322160S-70 HYM322160GS-70 HYM322160S-60
Description 2M x 32-Bit Dynamic RAM Module 2M x 32-Bit Dynamic RAM Module 2M x 32-Bit Dynamic RAM Module 2M x 32-Bit Dynamic RAM Module 2M x 32-Bit Dynamic RAM Module 2M x 32-Bit Dynamic RAM Module 2M x 32-Bit Dynamic RAM Module 2M x 32-Bit Dynamic RAM Module 2M x 32-Bit Dynamic RAM Module
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