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HYM322160S-60

Description
2M x 32-Bit Dynamic RAM Module
Categorystorage    storage   
File Size139KB,9 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

HYM322160S-60 Overview

2M x 32-Bit Dynamic RAM Module

HYM322160S-60 Parametric

Parameter NameAttribute value
MakerSIEMENS
Parts packaging codeSIMM
package instruction,
Contacts72
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFAST PAGE
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Spare memory width16
JESD-30 codeR-XSMA-N72
memory density67108864 bi
Memory IC TypeFAST PAGE DRAM MODULE
memory width32
Number of functions1
Number of ports1
Number of terminals72
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX32
Output characteristics3-STATE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Certification statusNot Qualified
refresh cycle1024
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal locationSINGLE
2M x 32-Bit Dynamic RAM Module
HYM 322160S/GS-60/-70
Advanced Information
2 097 152 words by 32-Bit organization
(alternative 4 194 304 words by 16-Bit)
Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
Fast page mode capability with
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
Single + 5 V (± 10 %) supply
Low power dissipation
max. 4840 mW active (-60 version)
max. 4400 mW active (-70 version)
CMOS – 88 mW standby
TTL – 176 mW standby
CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
8 decoupling capacitors mounted on
substrate
All inputs, outputs and clocks fully TTL
compatible
72 pin double-sided Single in-Line Memory
Module with 25.4 mm (1000 mil) height
Utilizes sixteen 1M
×
4 DRAMs in 300 mil
SOJ packages
1024 refresh cycles / 16 ms
Tin-Lead contact pads (S - version)
Gold contact pads (GS - version)
Ordering Information
Type
HYM 322160S-60
HYM 322160S-70
HYM 322160GS-60
HYM 322160GS-70
Ordering Code
Q67100-Q2014
Q67100-Q2015
Q67100-Q2016
Q67100-Q2017
Package
L-SIM-72-11
L-SIM-72-11
L-SIM-72-11
L-SIM-72-11
Description
DRAM Module
(access time 60 ns)
DRAM Module
(access time 70 ns)
DRAM Module
(access time 60 ns)
DRAM Module
(access time 70 ns)
Semiconductor Group
551
09.94

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HYM322160S-60 Q67100-Q2017 Q67100-Q2016 Q67100-Q2015 Q67100-Q2014 HYM322160S HYM322160GS-60 HYM322160S-70 HYM322160GS-70
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