HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
Obsolete:
IXFM42N20
IXFM50N20
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
V
DSS
IXFH/IXFM42N20
IXFH/IXFM/IXFT50N20
IXFH/IXFT58N20
200 V
200 V
200 V
I
D25
R
DS(on)
42 A 60mW
50 A 45mW
58 A 40mW
t
rr
£
200 ns
TO-247 AD (IXFH)
Maximum Ratings
200
200
±20
±30
42N20
50N20
58N20
42N20
50N20
58N20
42N20
50N20
58N20
42
50
58
168
200
232
42
50
58
30
5
300
-55 ... +150
150
-55 ... +150
V
V
V
V
G
TO-268 (D3) Case Style
(TAB)
A
A
A
A
A
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
S
(TAB)
TO-204 AE (IXFM)
S
Package
unavailable
D
G = Gate,
S = Source,
D = Drain,
TAB = Drain
G
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
T
C
= 25°C
I
S
£
I
DM
, di/dt
£
100 A/ms, V
DD
£
V
DSS
,
T
J
£
150°C, R
G
= 2
W
T
C
= 25°C
.
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Features
• International standard packages
• Low R
DS (on)
HDMOS
TM
process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• High power surface mountable package
• High power density
91522H (2/98)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
200
2
4
±100
T
J
= 25°C
T
J
= 125°C
200
1
V
V
nA
mA
mA
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
V
GS
= 0 V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
1-4
IXFH/IXFM42N20
IXFH/IXFM50N20
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
R
DS(on)
42N20
50N20
58N20
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
20
32
4400
800
285
18
15
72
16
190
35
95
0.25
25
20
90
25
220
50
110
V
GS
= 10 V, I
D
= 0.5 I
D25
Min.
IXFH/IXFM58N20 IXFT50N20
IXFT58N20
TO-247 AD (IXFH) Outline
Characteristic Values
Typ.
Max.
0.060
W
0.045
W
0.040
W
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 1
W
(External)
Dim. Millimeter
Min. Max.
A
B
C
D
E
F
G
H
J
K
L
M
N
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32 5.49
5.4
6.2
1.65 2.13
-
4.5
1.0
1.4
10.8 11.0
4.7
0.4
5.3
0.8
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
-
0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
(TO-247 and TO-204 Case styles)
0.42 K/W
K/W
Source-Drain Diode
Symbol
I
S
Test Conditions
V
GS
= 0 V
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ.
Max.
42N20
50N20
58N20
42N20
50N20
58N20
.
1.5 2.49
42
50
58
168
200
232
1.5
200
300
1.5
2.6
19
23
A
A
A
A
A
A
V
ns
ns
mC
mC
A
A
TO-204 AE (IXFM) Outline
I
SM
Repetitive;
pulse width limited by T
JM
V
SD
t
rr
Q
RM
I
RM
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
I
F
= 25A,
-di/dt = 100 A/ms,
V
R
= 100 V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
Dim.
A
B
C
D
E
F
G
H
J
K
Q
R
TO-268AA (D
3
PAK)
Dim.
A
A
1
A
2
b
b
2
C
D
E
E
1
e
H
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Millimeter
Min. Max.
38.61 39.12
- 22.22
6.40 11.40
1.45 1.60
1.52 3.43
30.15 BSC
10.67 11.17
5.21 5.71
16.64 17.14
11.18 12.19
3.84 4.19
25.16 26.66
Inches
Min. Max.
1.520 1.540
- 0.875
0.252 0.449
0.057 0.063
0.060 0.135
1.187 BSC
0.420 0.440
0.205 0.225
0.655 0.675
0.440 0.480
0.151 0.165
0.991 1.050
Min. Recommended Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-4
IXFH/IXFM42N20
IXFH/IXFM50N20
Fig. 1 Output Characteristics
100
90
80
70
60
50
40
30
20
10
0
5V
IXFH/IXFM58N20 IXFT50N20
IXFT58N20
Fig. 2 Input Admittance
100
90
80
70
60
50
40
30
20
10
0
T
J
= 25°C
V
GS
= 10V
9V
8V
7V
I
D
- Amperes
I
D
- Amperes
6V
T
J
= 25°C
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
V
DS
- Volts
V
GS
- Volts
Fig. 3 R
DS(on)
vs. Drain Current
2.6
2.4
Fig. 4 Temperature Dependence
of Drain to Source Resistance
2.50
2.25
R
DS(on)
- Normalized
R
DS(on)
- Normalized
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
25
50
75
100
125
150
175
V
GS
= 10V
V
GS
= 15V
.
2.00
1.75
1.50
1.25
1.00
0.75
0.50
-50
-25
0
25
50
75
100 125 150
I
D
= 25A
I
D
- Amperes
T
J
- Degrees C
Fig. 5 Drain Current vs.
Case Temperature
80
70
60
58N20
50N20
42N20
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
V
GS(th)
1.1
BV
DSS
BV/V
G(th)
- Normalized
I
D
- Amperes
1.0
0.9
0.8
0.7
0.6
50
40
30
20
10
0
-50
-25
0
25
50
75
100 125 150
0.5
-50
-25
0
25
50
75
100 125 150
T
C
- Degrees C
T
J
- Degrees C
© 2000 IXYS All rights reserved
3-4
IXFH/IXFM42N20
IXFH/IXFM50N20
Fig.7 Gate Charge Characteristic Curve
IXFH/IXFM58N20 IXFT50N20
IXFT58N20
Fig.8 Forward Bias Safe Operating Area
14
V
DS
= 100V
12
I = 10mA
G
I
D
= 50A
100
Limited by R
DS(on)
10µs
I
D
- Amperes
V
GE
- Volts
10
8
6
4
2
0
0
25
50
75
100 125 150 175 200
100µs
10
1ms
10ms
100ms
1
1
10
100
200
Gate Charge - nCoulombs
V
DS
- Volts
Fig.9 Capacitance Curves
4500
4000
50
40
Fig.10 Source Current vs. Source
to Drain Voltage
C
iss
Capacitance - pF
3500
I
D
- Amperes
3000
2500
2000
f = 1MHz
V
DS
= 25V
30
20
10
0
0.4
T
J
= 125°C
.
1500
1000
500
0
0
5
10
C
oss
C
rss
T
J
= 25°C
15
20
25
0.6
0.8
1.0
1.2
1.4
V
DS
- Volts
V
SD
- Volts
Fig.11 Transient Thermal Impedance
Thermal Response - K/W
D=0.5
0.1
D=0.2
D=0.1
D=0.05
0.01
D=0.02
D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
© 2000 IXYS All rights reserved
4-4
Embedded System
京公网安备 11010802033920号
EEWORLD
