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NTMFS4C09N

Description
Power MOSFET 30 V, 52 A, Single N−Channel, SO−8 FL
File Size90KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NTMFS4C09N Overview

Power MOSFET 30 V, 52 A, Single N−Channel, SO−8 FL

NTMFS4C09N
Power MOSFET
30 V, 52 A, Single N−Channel, SO−8 FL
Features
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
V
(BR)DSS
30 V
R
DS(ON)
MAX
5.8 mW @ 10 V
I
D
MAX
52 A
Applications
CPU Power Delivery
DC−DC Converters
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
10 s
(Note 1)
Power Dissipation
R
qJA
10 s (Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
Steady
State
T
A
= 25°C
T
A
= 80°C
T
A
= 25°C
T
A
= 25°C
T
A
= 80°C
T
A
= 25°C
T
A
= 25°C
T
A
= 80°C
T
A
= 25°C
T
C
= 25°C
T
C
=80°C
T
C
= 25°C
T
A
= 25°C, t
p
= 10
ms
T
A
= 25°C
P
D
I
DM
I
Dmax
T
J
,
T
STG
I
S
dV/d
t
E
AS
P
D
I
D
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
16.4
12.3
2.51
25.3
19.0
6.0
9.0
6.8
0.76
52
39
25.5
146
80
−55 to
+150
23
7.0
42
W
W
A
W
A
W
A
Unit
V
V
A
8.5 mW @ 4.5 V
D (5−8)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAMS
D
S
SO−8 FLAT LEAD
S
CASE 488AA
S
STYLE 1
G
A
Y
W
ZZ
D
4C09N
AYWZZ
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceabililty
1
ORDERING INFORMATION
A
A
°C
NTMFS4C09NT3G
A
V/ns
mJ
Device
NTMFS4C09NT1G
Package
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
Shipping
1500 /
Tape & Reel
5000 /
Tape & Reel
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
GS
= 10 V, I
L
= 29 A
pk
,
L = 0.1 mH, R
GS
= 25
W)
(Note 3)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. Parts are 100% tested at T
J
= 25°C, V
GS
= 10 V, I
L
= 20 A
pk
, EAS = 20 mJ.
©
Semiconductor Components Industries, LLC, 2015
1
November, 2015 − Rev. 5
Publication Order Number:
NTMFS4C09N/D

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