Low V
CE(sat)
IGBT with Diode
High speed IGBT with Diode
Combi Packs
V
CES
IXGH10N60U1
600 V
IXGH10N60AU1
600 V
I
C25
20 A
20 A
V
CE(sat)
2.5 V
3.0 V
TO-247 AD
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (M3)
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 150
Ω
Clamped inductive load, L = 300
µH
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
20
10
40
I
CM
= 20
@ 0.8 V
CES
100
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
°C
°C
°C
Features
l
G
C
E
C = Collector,
TAB = Collector
G = Gate,
E = Emitter,
l
1.13/10 Nm/lb.in.
6
300
g
°C
l
l
l
l
International standard package
JEDEC TO-247 AD
IGBT and anti-parallel FRED in one
package
2nd generation HDMOS
TM
process
Low V
CE(sat)
- for low on-state conduction losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode FRED)
- soft recovery with low I
RM
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T
J
= 25°C
T
J
= 125°C
5.5
260
2.5
±100
10N60U1
10N60AU1
2.5
3.0
V
V
µA
mA
nA
V
V
l
l
l
l
l
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 750
µA,
V
GE
= 0 V
= 500
µA,
V
CE
= V
GE
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
Advantages
l
l
l
Space savings (two devices in one
package)
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
© 1996 IXYS All rights reserved
91751G(3/96)
IXGH10N60U1 IXGH10N60AU1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
4
8
750
125
30
50
15
25
100
200
0.4
600
300
0.6
100
200
1
900
570
360
2.0
1.2
0.25
70
25
45
S
pF
pF
pF
nC
nC
nC
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
1500 ns
2000 ns
600 ns
mJ
mJ
1.25 K/W
K/W
TO-247 AD Outline
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= I
C90
; V
CE
= 10 V,
Pulse test, t
≤
300
µs,
duty cycle
≤
2 %
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
Inductive load, T
J
= 25°C
°
I
C
= I
C90
, V
GE
= 15 V, L = 100
µH
V
CE
= 0.8 V
CES
, R
G
= R
off
= 150
Ω
Switching times may increase
for V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125°C
°
I
C
= I
C90
, V
GE
= 15 V, L = 100
µH
V
CE
= 0.8 V
CES
, R
G
= R
off
= 150
Ω
Switching times may increase
for V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
10N60AU1
10N60AU1
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
10N60U1
10N60AU1
10N60U1
10N60AU1
Reverse Diode (FRED)
Symbol
V
F
I
RM
t
rr
R
thJC
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1.75
2.5
165
35
V
A
ns
ns
I
F
= I
C90
, V
GE
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 64 A/µs
V
R
= 360 V
T
J
= 100°C
I
F
= 1 A; -di/dt = 50 A/µs; V
R
= 30 V T
J
= 25°C
50
2.5 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXGH10N60U1 IXGH10N60AU1
Fig. 1 Saturation Characteristics
20
18
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
7V
T
J
= 25°C
V
GE
=15V
13V
11V
9V
Fig. 2
100
90
80
70
60
50
40
30
20
10
0
T
J
= 25°C
Output Characterstics
V
GE
= 15V
13V
I
C
- Amperes
I
C
- Amperes
11V
9V
7V
0
2
4
6
8
10 12 14 16 18 20
V
CE
- Volts
V
CE
- Volts
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
9
8
7
T
J
= 25°C
Fig. 4
1.5
1.4
V
GE
= 15V
Temperature Dependence
of Output Saturation Voltage
I
C
= 20A
V
CE(sat)
- Normalized
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
I
C
= 5A
I
C
= 10A
V
CE
- Volts
6
5
4
3
2
1
0
5
6
7
8
9
10 11 12 13 14 15
I
C
= 20A
I
C
= 10A
I
C
= 5A
-50
-25
0
25
50
75
100 125 150
V
GE
- Volts
T
J
- Degrees C
Fig. 5 Input Admittance
20
18
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
Fig. 6
1.2
Temperature Dependence of
Breakdown and Threshold Voltage
V
GE(th)
I
C
= 250µA
BV / V
GE(th)
- Normalized
V
CE
= 10 V
1.1
1.0
0.9
0.8
0.7
0.6
-50
I
C
- Amperes
BV
CES
I
C
= 250µA
-25
0
25
50
75
100 125 150
V
GE
- Volts
G
N
JNB
T
J
- Degrees C
© 1996 IXYS All rights reserved
IXGH10N60U1 IXGH10N60AU1
Fig.7 Gate Charge
15
13
11
V
CE
= 480V
I
G
= 10mA
Fig.8 Turn-Off Safe Operating Area
100
10
T
J
= 125°C
9
7
5
3
1
I
C
- Amperes
V
GE
- Volts
I
C
= 10A
dV/dt < 3V/ns
1
0.1
0.01
0
10
20
30
40
50
0
100
200
300
400
500
600
Total Gate Charge - (nC)
V
CE
- Volts
Fig.9 Capacitance Curves
800
700
f = 1MHz
C
ies
Capacitance - pF
600
500
400
300
200
100
0
0
5
10
15
20
25
C
oes
C
res
V
CE
- Volts
Fig.10 Transient Thermal Impedance
Thermal Response - K/W
1.00
D=0.5
D=0.2
D=0.1
0.10
D=0.05
D=0.02
D=0.01
Single Pulse
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXGH10N60U1 IXGH10N60AU1
Fig.11 Maximum Forward Voltage Drop
40
35
25
Fig.12
Peak Forward Voltage V
FR
and
Forward Recovery Time t
FR
1000
T
J
= 125°C
Current - Amperes
25
20
15
10
5
0
0.0
0.5
1.0
1.5
T
J
= 150°C
T
J
= 25°C
T
J
= 100°C
15
10
5
0
t
fr
600
400
200
0
300
2.0
2.5
0
50
100
150
200
250
Voltage Drop - Volts
di
F
/dt - A/µs
Fig.13 Junction Temperature Dependence
off I
RM
and Q
r
1.4
1.2
1.0
Fig.14
T
J
= 100°C
Reverse Recovery Charge
Normalized I
RM
/ Q
r
1.0
0.8
I
RM
Q
r
- nanocoulombs
0.8
0.6
0.4
0.2
V
R
= 350V
I
F
= 8A
max
0.6
0.4
0.2
0.0
0
Q
r
0.0
40
80
120
160
1
10
100
1000
T
J
- Degrees C
di
F
/dt - A/µs
Fig.15 Peak Reverse Recovery Current
25
T
J
= 100°C
Fig.16
400
Reverse Recovery Time
20
V
R
= 350V
T
J
= 100°C
t
rr
- nanoseconds
I
F
= 8A
300
V
R
= 350V
I
F
= 8A
I
RM
- Amperes
15
10
5
0
0
100
max
200
100
0
200
300
400
0
100
200
300
400
di
F
/dt - A/µs
di
F
/dt - A/µs
© 1996 IXYS All rights reserved
t
fr
- nanoseconds
30
20
I
F
= 8A
V
FR
800
V
FR
- Volts
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